TY - JOUR
T1 - Reducing the contact and channel resistances of black phosphorus
T2 - Via low-temperature vacuum annealing
AU - Park, Hyunik
AU - Son, Jongha
AU - Kim, Jihyun
N1 - Funding Information:
This research was supported by the National Research Foundation of Korea (2015R1D1A1A09057970 and 2017M1A2A2087351) funded by the Ministry of Science, ICT and Future Planning of Korea.
PY - 2018
Y1 - 2018
N2 - The effects of post-fabrication vacuum annealing on the performance of black phosphorus (BP) field-effect transistors (FETs) were investigated. Ohmic contact to the BP layer was improved after vacuum annealing below 250 °C, showing better linearity in current-voltage output characteristics. In addition, the channel resistance was greatly improved from 39.5 to 0.299 kΩ mm after vacuum annealing over 200 °C due to the desorption of residues and adsorbates, which led to an enhanced device performance including a higher current injection efficiency, field-effect hole mobility (5.04 to 140 cm2 V-1 s-1), current on/off ratio (2.34 to 370), lower Ohmic loss (17.8 to 0.103 kΩ mm), and less hysteresis. The field-effect hole mobilities and current on/off ratios of the BP FET device vacuum-annealed at 250 °C were found to be 28 and 158 times higher, respectively, than those of the as-fabricated device. However, the device performance deteriorated after vacuum annealing over 300 °C owing to the catalytic amorphization of BP caused by the metal electrodes. Our results pave the way towards the development of high-performance BP-based devices with minimal parasitic elements via low-temperature vacuum annealing.
AB - The effects of post-fabrication vacuum annealing on the performance of black phosphorus (BP) field-effect transistors (FETs) were investigated. Ohmic contact to the BP layer was improved after vacuum annealing below 250 °C, showing better linearity in current-voltage output characteristics. In addition, the channel resistance was greatly improved from 39.5 to 0.299 kΩ mm after vacuum annealing over 200 °C due to the desorption of residues and adsorbates, which led to an enhanced device performance including a higher current injection efficiency, field-effect hole mobility (5.04 to 140 cm2 V-1 s-1), current on/off ratio (2.34 to 370), lower Ohmic loss (17.8 to 0.103 kΩ mm), and less hysteresis. The field-effect hole mobilities and current on/off ratios of the BP FET device vacuum-annealed at 250 °C were found to be 28 and 158 times higher, respectively, than those of the as-fabricated device. However, the device performance deteriorated after vacuum annealing over 300 °C owing to the catalytic amorphization of BP caused by the metal electrodes. Our results pave the way towards the development of high-performance BP-based devices with minimal parasitic elements via low-temperature vacuum annealing.
UR - http://www.scopus.com/inward/record.url?scp=85041547743&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85041547743&partnerID=8YFLogxK
U2 - 10.1039/c7tc05325h
DO - 10.1039/c7tc05325h
M3 - Article
AN - SCOPUS:85041547743
SN - 2050-7526
VL - 6
SP - 1567
EP - 1572
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
IS - 6
ER -