Reduction in critical current density of current-induced magnetization switching

Kyung Jin Lee, T. H.Y. Nguyen, Kyung Ho Shin

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


We have investigated the current-induced magnetization switching in an exchange-biased spin valve structure. By using an unpatterned antiferromagnetic layer to pin the fixed Co layer, we obtained a lower switching current density by a factor of 5 than a simple spin valve structure. For the application, it is important to know how to keep the spin polarization when the thicker layer is pinned by an antiferromagnet. The unpatterned pinned ferromagnetic lead can be a good solution for spin-transfer-torque-activated device. The effect of Cu buffer layer on the top of the thin Co and Ru buffer layer under the thick Co layer on the current-induced magnetization switching in cobalt-based trilayer spin valves was also investigated. The experimental results showed that the Ru buffer layer in combination with Cu buffer layer could induce a decrease in the critical switching current by 30%, and an increase in the absolute resistance change by 35%, which is caused by an improvement of a microstructure of a thicker Co polarizer.

Original languageEnglish
Pages (from-to)102-105
Number of pages4
JournalJournal of Magnetism and Magnetic Materials
Issue number1
Publication statusPublished - 2006 Sept

Bibliographical note

Funding Information:
This work was supported by the Korea Institute of Science and Technology Vision 21 Program, by the TND Frontier Project funded by KISTEP, and by the Ministry of Science and Technology of Korea through the Cavendish-KAIST Research Cooperation Center.


  • Current-induced magnetization switching
  • Spin-transfer-torque

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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