Abstract
The reduction of the dislocation density in relaxed SiGe/Si heterostructures using a low-temperature Si(LT-Si) buffer has been investigated. We have shown that a 0.1 μm LT-Si buffer reduces the threading dislocation density in mismatched Si0.85Ge0.15/Si epitaxial layers as low as ∼104cm-2. Samples were grown by both gas-source molecular beam epitaxy and ultrahigh vacuum chemical vapor deposition.
Original language | English |
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Pages (from-to) | 3224-3226 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 70 |
Issue number | 24 |
DOIs | |
Publication status | Published - 1997 Jun 16 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)