Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer

K. K. Linder; F. C. Zhang; J. S. Rieh; P. Bhattacharya; D. Houghton

doi:10.1063/1.119132

Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer

K. K. Linder, F. C. Zhang, J. S. Rieh, P. Bhattacharya, D. Houghton

Research output: Contribution to journal › Article › peer-review

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Abstract

The reduction of the dislocation density in relaxed SiGe/Si heterostructures using a low-temperature Si(LT-Si) buffer has been investigated. We have shown that a 0.1 μm LT-Si buffer reduces the threading dislocation density in mismatched Si_0.85Ge_0.15/Si epitaxial layers as low as ∼10⁴cm^-2. Samples were grown by both gas-source molecular beam epitaxy and ultrahigh vacuum chemical vapor deposition.

Original language	English
Pages (from-to)	3224-3226
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	24
DOIs	https://doi.org/10.1063/1.119132
Publication status	Published - 1997 Jun 16
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The reduction of the dislocation density in relaxed SiGe/Si heterostructures using a low-temperature Si(LT-Si) buffer has been investigated. We have shown that a 0.1 μm LT-Si buffer reduces the threading dislocation density in mismatched Si0.85Ge0.15/Si epitaxial layers as low as ∼104cm-2. Samples were grown by both gas-source molecular beam epitaxy and ultrahigh vacuum chemical vapor deposition.",

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AU - Rieh, J. S.

AU - Bhattacharya, P.

AU - Houghton, D.

PY - 1997/6/16

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N2 - The reduction of the dislocation density in relaxed SiGe/Si heterostructures using a low-temperature Si(LT-Si) buffer has been investigated. We have shown that a 0.1 μm LT-Si buffer reduces the threading dislocation density in mismatched Si0.85Ge0.15/Si epitaxial layers as low as ∼104cm-2. Samples were grown by both gas-source molecular beam epitaxy and ultrahigh vacuum chemical vapor deposition.

AB - The reduction of the dislocation density in relaxed SiGe/Si heterostructures using a low-temperature Si(LT-Si) buffer has been investigated. We have shown that a 0.1 μm LT-Si buffer reduces the threading dislocation density in mismatched Si0.85Ge0.15/Si epitaxial layers as low as ∼104cm-2. Samples were grown by both gas-source molecular beam epitaxy and ultrahigh vacuum chemical vapor deposition.

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Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer

Abstract

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