Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer

K. K. Linder; F. C. Zhang; J. S. Rieh; P. Bhattacharya; D. Houghton

doi:10.1063/1.119132

Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer

K. K. Linder^*
, F. C. Zhang
, J. S. Rieh
, P. Bhattacharya
, D. Houghton

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

113 Citations (Scopus)

Abstract

The reduction of the dislocation density in relaxed SiGe/Si heterostructures using a low-temperature Si(LT-Si) buffer has been investigated. We have shown that a 0.1 μm LT-Si buffer reduces the threading dislocation density in mismatched Si_0.85Ge_0.15/Si epitaxial layers as low as ∼10⁴cm^-2. Samples were grown by both gas-source molecular beam epitaxy and ultrahigh vacuum chemical vapor deposition.

Original language	English
Pages (from-to)	3224-3226
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	24
DOIs	https://doi.org/10.1063/1.119132
Publication status	Published - 1997 Jun 16
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.119132

Cite this

@article{eab4386ff71045e4bfe5b2edfdf13eeb,

title = "Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer",

abstract = "The reduction of the dislocation density in relaxed SiGe/Si heterostructures using a low-temperature Si(LT-Si) buffer has been investigated. We have shown that a 0.1 μm LT-Si buffer reduces the threading dislocation density in mismatched Si0.85Ge0.15/Si epitaxial layers as low as ∼104cm-2. Samples were grown by both gas-source molecular beam epitaxy and ultrahigh vacuum chemical vapor deposition.",

author = "Linder, \{K. K.\} and Zhang, \{F. C.\} and Rieh, \{J. S.\} and P. Bhattacharya and D. Houghton",

year = "1997",

month = jun,

day = "16",

doi = "10.1063/1.119132",

language = "English",

volume = "70",

pages = "3224--3226",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "24",

}

TY - JOUR

T1 - Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer

AU - Linder, K. K.

AU - Zhang, F. C.

AU - Rieh, J. S.

AU - Bhattacharya, P.

AU - Houghton, D.

PY - 1997/6/16

Y1 - 1997/6/16

N2 - The reduction of the dislocation density in relaxed SiGe/Si heterostructures using a low-temperature Si(LT-Si) buffer has been investigated. We have shown that a 0.1 μm LT-Si buffer reduces the threading dislocation density in mismatched Si0.85Ge0.15/Si epitaxial layers as low as ∼104cm-2. Samples were grown by both gas-source molecular beam epitaxy and ultrahigh vacuum chemical vapor deposition.

AB - The reduction of the dislocation density in relaxed SiGe/Si heterostructures using a low-temperature Si(LT-Si) buffer has been investigated. We have shown that a 0.1 μm LT-Si buffer reduces the threading dislocation density in mismatched Si0.85Ge0.15/Si epitaxial layers as low as ∼104cm-2. Samples were grown by both gas-source molecular beam epitaxy and ultrahigh vacuum chemical vapor deposition.

UR - https://www.scopus.com/pages/publications/0000633865

U2 - 10.1063/1.119132

DO - 10.1063/1.119132

M3 - Article

AN - SCOPUS:0000633865

SN - 0003-6951

VL - 70

SP - 3224

EP - 3226

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this