Reduction of residual carbon in GaAsN films grown by chemical beam epitaxy

Hidetoshi Suzuki; Kenichi Nishimura; Hae Seok Lee; Kenji Saito; Tetsuya Kawahigashi; Takahiro Imai; Yoshio Ohshita; Masafumi Yamaguchi

doi:10.1109/WCPEC.2006.279582

Reduction of residual carbon in GaAsN films grown by chemical beam epitaxy

Hidetoshi Suzuki, Kenichi Nishimura, Hae Seok Lee, Kenji Saito, Tetsuya Kawahigashi, Takahiro Imai, Yoshio Ohshita, Masafumi Yamaguchi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Crystal quality of GaAsN films can be improved by using chemical beam epitaxy method for low-temperature growth. However, low-temperature growth increases carbon (C) incorporation in the films, which degrades their electrical properties. To reduce the C concentration in the films, C incorporation process was investigated in view of the surface reaction of nitrogen (N) sources on a substrate surface, and monomethylhydrazine (MMHy) and 1,1-dimethylhydrazine (DMHy) were compared. When MMHy was used as an N source, the C concentration in GaAsN drastically increases below 380°C than that in GaAs due to insufficient CH_x desorption. In the case of DMHy, N(CH ₃)₂ is desorbed more readily than CH_x, Therefore, the C concentration can then be reduced by using DMHy.

Original language	English
Title of host publication	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Publisher	IEEE Computer Society
Pages	819-822
Number of pages	4
ISBN (Print)	1424400163, 9781424400164
DOIs	https://doi.org/10.1109/WCPEC.2006.279582
Publication status	Published - 2006
Externally published	Yes
Event	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States Duration: 2006 May 7 → 2006 May 12

Publication series

Name	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume	1

Other

Other	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country/Territory	United States
City	Waikoloa, HI
Period	06/5/7 → 06/5/12

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/WCPEC.2006.279582

Cite this

Suzuki, H., Nishimura, K., Lee, H. S., Saito, K., Kawahigashi, T., Imai, T., Ohshita, Y., & Yamaguchi, M. (2006). Reduction of residual carbon in GaAsN films grown by chemical beam epitaxy. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (pp. 819-822). Article 4059755 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1). IEEE Computer Society. https://doi.org/10.1109/WCPEC.2006.279582

Reduction of residual carbon in GaAsN films grown by chemical beam epitaxy. / Suzuki, Hidetoshi; Nishimura, Kenichi; Lee, Hae Seok et al.
Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. p. 819-822 4059755 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Suzuki, H, Nishimura, K, Lee, HS, Saito, K, Kawahigashi, T, Imai, T, Ohshita, Y & Yamaguchi, M 2006, Reduction of residual carbon in GaAsN films grown by chemical beam epitaxy. in Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4., 4059755, Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, vol. 1, IEEE Computer Society, pp. 819-822, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States, 06/5/7. https://doi.org/10.1109/WCPEC.2006.279582

Suzuki H, Nishimura K, Lee HS, Saito K, Kawahigashi T, Imai T et al. Reduction of residual carbon in GaAsN films grown by chemical beam epitaxy. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society. 2006. p. 819-822. 4059755. (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4). doi: 10.1109/WCPEC.2006.279582

Suzuki, Hidetoshi ; Nishimura, Kenichi ; Lee, Hae Seok et al. / Reduction of residual carbon in GaAsN films grown by chemical beam epitaxy. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. pp. 819-822 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4).

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abstract = "Crystal quality of GaAsN films can be improved by using chemical beam epitaxy method for low-temperature growth. However, low-temperature growth increases carbon (C) incorporation in the films, which degrades their electrical properties. To reduce the C concentration in the films, C incorporation process was investigated in view of the surface reaction of nitrogen (N) sources on a substrate surface, and monomethylhydrazine (MMHy) and 1,1-dimethylhydrazine (DMHy) were compared. When MMHy was used as an N source, the C concentration in GaAsN drastically increases below 380°C than that in GaAs due to insufficient CHx desorption. In the case of DMHy, N(CH 3)2 is desorbed more readily than CHx, Therefore, the C concentration can then be reduced by using DMHy.",

author = "Hidetoshi Suzuki and Kenichi Nishimura and Lee, {Hae Seok} and Kenji Saito and Tetsuya Kawahigashi and Takahiro Imai and Yoshio Ohshita and Masafumi Yamaguchi",

year = "2006",

doi = "10.1109/WCPEC.2006.279582",

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AU - Suzuki, Hidetoshi

AU - Nishimura, Kenichi

AU - Lee, Hae Seok

AU - Saito, Kenji

AU - Kawahigashi, Tetsuya

AU - Imai, Takahiro

AU - Ohshita, Yoshio

AU - Yamaguchi, Masafumi

PY - 2006

Y1 - 2006

N2 - Crystal quality of GaAsN films can be improved by using chemical beam epitaxy method for low-temperature growth. However, low-temperature growth increases carbon (C) incorporation in the films, which degrades their electrical properties. To reduce the C concentration in the films, C incorporation process was investigated in view of the surface reaction of nitrogen (N) sources on a substrate surface, and monomethylhydrazine (MMHy) and 1,1-dimethylhydrazine (DMHy) were compared. When MMHy was used as an N source, the C concentration in GaAsN drastically increases below 380°C than that in GaAs due to insufficient CHx desorption. In the case of DMHy, N(CH 3)2 is desorbed more readily than CHx, Therefore, the C concentration can then be reduced by using DMHy.

AB - Crystal quality of GaAsN films can be improved by using chemical beam epitaxy method for low-temperature growth. However, low-temperature growth increases carbon (C) incorporation in the films, which degrades their electrical properties. To reduce the C concentration in the films, C incorporation process was investigated in view of the surface reaction of nitrogen (N) sources on a substrate surface, and monomethylhydrazine (MMHy) and 1,1-dimethylhydrazine (DMHy) were compared. When MMHy was used as an N source, the C concentration in GaAsN drastically increases below 380°C than that in GaAs due to insufficient CHx desorption. In the case of DMHy, N(CH 3)2 is desorbed more readily than CHx, Therefore, the C concentration can then be reduced by using DMHy.

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Reduction of residual carbon in GaAsN films grown by chemical beam epitaxy

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UN SDGs

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