Reduction of stacking fault density in m -plane GaN grown on SiC

Y. S. Cho; Q. Sun; I. H. Lee; T. S. Ko; C. D. Yerino; J. Han; B. H. Kong; H. K. Cho; S. Wang

doi:10.1063/1.2985816

Reduction of stacking fault density in m -plane GaN grown on SiC

Y. S. Cho, Q. Sun, I. H. Lee, T. S. Ko, C. D. Yerino, J. Han, B. H. Kong, H. K. Cho, S. Wang

Research output: Contribution to journal › Article › peer-review

56 Citations (Scopus)

Abstract

We report the reduction in basal-plane stacking faults (BSFs) in m -plane GaN grown on m -plane SiC. The origin of BSFs is linked to heteronucleation of m -plane GaN and the presence of N-face basal-plane sidewalls of three-dimensional islands. Graded AlGaN layers help to alleviate mismatched nucleation and the generation of BSFs. Transmission electron microscopy shows that the density of BSFs is decreased to the low 10⁵ cm^-1. Anisotropy in on-axis x-ray rocking curves, a salient feature in m -plane GaN heteroepitaxial layers, is greatly reduced. A possible mechanism of BSF generation, and the demonstration of improved InGaNGaN quantum well emission are presented.

Original language	English
Article number	111904
Journal	Applied Physics Letters
Volume	93
Issue number	11
DOIs	https://doi.org/10.1063/1.2985816
Publication status	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2985816

Cite this

@article{197414b6b20042758be05dc2e1ef1924,

title = "Reduction of stacking fault density in m -plane GaN grown on SiC",

abstract = "We report the reduction in basal-plane stacking faults (BSFs) in m -plane GaN grown on m -plane SiC. The origin of BSFs is linked to heteronucleation of m -plane GaN and the presence of N-face basal-plane sidewalls of three-dimensional islands. Graded AlGaN layers help to alleviate mismatched nucleation and the generation of BSFs. Transmission electron microscopy shows that the density of BSFs is decreased to the low 105 cm-1. Anisotropy in on-axis x-ray rocking curves, a salient feature in m -plane GaN heteroepitaxial layers, is greatly reduced. A possible mechanism of BSF generation, and the demonstration of improved InGaNGaN quantum well emission are presented.",

author = "Cho, {Y. S.} and Q. Sun and Lee, {I. H.} and Ko, {T. S.} and Yerino, {C. D.} and J. Han and Kong, {B. H.} and Cho, {H. K.} and S. Wang",

note = "Funding Information: This work is supported by the United States Department of Energy under Contract No. DE-FC26-07NT43227. Discussions with Professor M. L. Lee (Yale) are acknowledged.",

year = "2008",

doi = "10.1063/1.2985816",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "11",

}

TY - JOUR

T1 - Reduction of stacking fault density in m -plane GaN grown on SiC

AU - Cho, Y. S.

AU - Sun, Q.

AU - Lee, I. H.

AU - Ko, T. S.

AU - Yerino, C. D.

AU - Han, J.

AU - Kong, B. H.

AU - Cho, H. K.

AU - Wang, S.

N1 - Funding Information: This work is supported by the United States Department of Energy under Contract No. DE-FC26-07NT43227. Discussions with Professor M. L. Lee (Yale) are acknowledged.

PY - 2008

Y1 - 2008

N2 - We report the reduction in basal-plane stacking faults (BSFs) in m -plane GaN grown on m -plane SiC. The origin of BSFs is linked to heteronucleation of m -plane GaN and the presence of N-face basal-plane sidewalls of three-dimensional islands. Graded AlGaN layers help to alleviate mismatched nucleation and the generation of BSFs. Transmission electron microscopy shows that the density of BSFs is decreased to the low 105 cm-1. Anisotropy in on-axis x-ray rocking curves, a salient feature in m -plane GaN heteroepitaxial layers, is greatly reduced. A possible mechanism of BSF generation, and the demonstration of improved InGaNGaN quantum well emission are presented.

AB - We report the reduction in basal-plane stacking faults (BSFs) in m -plane GaN grown on m -plane SiC. The origin of BSFs is linked to heteronucleation of m -plane GaN and the presence of N-face basal-plane sidewalls of three-dimensional islands. Graded AlGaN layers help to alleviate mismatched nucleation and the generation of BSFs. Transmission electron microscopy shows that the density of BSFs is decreased to the low 105 cm-1. Anisotropy in on-axis x-ray rocking curves, a salient feature in m -plane GaN heteroepitaxial layers, is greatly reduced. A possible mechanism of BSF generation, and the demonstration of improved InGaNGaN quantum well emission are presented.

UR - http://www.scopus.com/inward/record.url?scp=52349092420&partnerID=8YFLogxK

U2 - 10.1063/1.2985816

DO - 10.1063/1.2985816

M3 - Article

AN - SCOPUS:52349092420

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 111904

ER -

Reduction of stacking fault density in m -plane GaN grown on SiC

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this