Reduction of switching field in spin-flop switching for high-density magnetic random access memory

K. S. Kim, K. H. Shin, S. H. Lim

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3 Citations (Scopus)


A magnetization switching method for magnetic random access memory (MRAM), recently proposed by Savtchenko et al. [U.S. Patent No. 6,545,906 (2003)], is known to have an important advantage of a wide window for bit writing over the conventional method based on the asteroid curve, but it has a serious problem of high switching fields. In an effort to solve this problem, the effects of the thickness asymmetry and antiferromagnetic exchange coupling of the synthetic antiferromagnetic free-layer structure on the switching field have been investigated by micromagnetic computer simulation. At conditions relevant to high-density MRAM, magnetization switching in the direct write mode occurs at reasonably low values of word- and bit-line fields (below 100 Oe), combined with a substantially wide window for bit writing. A much wider window is observed in the toggle mode, but the required switching fields are too high, being over 150 Oe.

Original languageEnglish
Article number014502
JournalJournal of Applied Physics
Issue number1
Publication statusPublished - 2006

Bibliographical note

Funding Information:
Financial support from the Teralevel Nanodevices Project (a 21st Century Frontier Research Project) and the Research Center of Advanced Magnetic Materials at CNU is gratefully acknowledged.

ASJC Scopus subject areas

  • General Physics and Astronomy


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