Reduction of Threshold Voltage Hysteresis of MoS2 Transistors with 3-Aminopropyltriethoxysilane Passivation and Its Application for Improved Synaptic Behavior

Kyu Hyun Han; Gwang Sik Kim; June Park; Seung Geun Kim; Jin Hong Park; Hyun Yong Yu

doi:10.1021/acsami.9b01391

Reduction of Threshold Voltage Hysteresis of MoS₂ Transistors with 3-Aminopropyltriethoxysilane Passivation and Its Application for Improved Synaptic Behavior

Kyu Hyun Han, Gwang Sik Kim, June Park, Seung Geun Kim, Jin Hong Park, Hyun Yong Yu

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Although molybdenum disulfide (MoS₂) is highlighted as a promising channel material, MoS₂-based field-effect transistors (FETs) have a large threshold voltage hysteresis (ΔV_TH) from interface traps at their gate interfaces. In this work, the ΔV_TH of MoS₂ FETs is significantly reduced by inserting a 3-aminopropyltriethoxysilane (APTES) passivation layer at the MoS₂/SiO₂ gate interface owing to passivation of the interface traps. The ΔV_TH is reduced from 23 to 10.8 V by inserting the 1%-APTES passivation layers because APTES passivation prevents trapping and detrapping of electrons, which are the major source of the ΔV_TH. The reduction in the density of interface traps (D_it) is confirmed by the improvement of the subthreshold swing (SS) after inserting the APTES layer. Furthermore, the improvement in the synaptic characteristics of the MoS₂ FET through the APTES passivation is investigated. Both inhibitory and excitatory postsynaptic currents (PSC) are increased by 33% owing to the reduction in the ΔV_TH and the n-type doping effect of the APTES layer; moreover, the linearity of PSC characteristics is significantly improved because the reduction in ΔV_TH enables the synaptic operation to be over the threshold region, which is linear. The application of the APTES gate passivation technique to MoS₂ FETs is promising for reliable and accurate synaptic applications in neuromorphic computing technology as well as for the next-generation complementary logic applications.

Original language	English
Pages (from-to)	20949-20955
Number of pages	7
Journal	ACS Applied Materials and Interfaces
Volume	11
Issue number	23
DOIs	https://doi.org/10.1021/acsami.9b01391
Publication status	Published - 2019 Jun 12

Bibliographical note

Funding Information:
This work was supported in part by the Basic Science Research Program within the Ministry of Science, ICT, and Future Planning through the National Research Foundation of Korea under grant 2017R1A2B4006460, in part by Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2016M3A7B4910426), and in part by the Nano Material Technology Development Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning under grant 2015M3A7B7045490.

Publisher Copyright:
© 2019 American Chemical Society.

Keywords

3-aminopropyltriethoxysilane
molybdenum disulfide
surface passivation
synapse applications
threshold voltage hysteresis

ASJC Scopus subject areas

General Materials Science

Access to Document

10.1021/acsami.9b01391

Cite this

@article{81063992591d45a386c5ca0de231df4f,

title = "Reduction of Threshold Voltage Hysteresis of MoS2 Transistors with 3-Aminopropyltriethoxysilane Passivation and Its Application for Improved Synaptic Behavior",

abstract = "Although molybdenum disulfide (MoS2) is highlighted as a promising channel material, MoS2-based field-effect transistors (FETs) have a large threshold voltage hysteresis (ΔVTH) from interface traps at their gate interfaces. In this work, the ΔVTH of MoS2 FETs is significantly reduced by inserting a 3-aminopropyltriethoxysilane (APTES) passivation layer at the MoS2/SiO2 gate interface owing to passivation of the interface traps. The ΔVTH is reduced from 23 to 10.8 V by inserting the 1%-APTES passivation layers because APTES passivation prevents trapping and detrapping of electrons, which are the major source of the ΔVTH. The reduction in the density of interface traps (Dit) is confirmed by the improvement of the subthreshold swing (SS) after inserting the APTES layer. Furthermore, the improvement in the synaptic characteristics of the MoS2 FET through the APTES passivation is investigated. Both inhibitory and excitatory postsynaptic currents (PSC) are increased by 33% owing to the reduction in the ΔVTH and the n-type doping effect of the APTES layer; moreover, the linearity of PSC characteristics is significantly improved because the reduction in ΔVTH enables the synaptic operation to be over the threshold region, which is linear. The application of the APTES gate passivation technique to MoS2 FETs is promising for reliable and accurate synaptic applications in neuromorphic computing technology as well as for the next-generation complementary logic applications.",

keywords = "3-aminopropyltriethoxysilane, molybdenum disulfide, surface passivation, synapse applications, threshold voltage hysteresis",

author = "Han, {Kyu Hyun} and Kim, {Gwang Sik} and June Park and Kim, {Seung Geun} and Park, {Jin Hong} and Yu, {Hyun Yong}",

note = "Funding Information: This work was supported in part by the Basic Science Research Program within the Ministry of Science, ICT, and Future Planning through the National Research Foundation of Korea under grant 2017R1A2B4006460, in part by Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2016M3A7B4910426), and in part by the Nano Material Technology Development Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning under grant 2015M3A7B7045490. Publisher Copyright: {\textcopyright} 2019 American Chemical Society.",

year = "2019",

month = jun,

day = "12",

doi = "10.1021/acsami.9b01391",

language = "English",

volume = "11",

pages = "20949--20955",

journal = "ACS Applied Materials and Interfaces",

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publisher = "American Chemical Society",

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T1 - Reduction of Threshold Voltage Hysteresis of MoS2 Transistors with 3-Aminopropyltriethoxysilane Passivation and Its Application for Improved Synaptic Behavior

AU - Han, Kyu Hyun

AU - Kim, Gwang Sik

AU - Park, June

AU - Kim, Seung Geun

AU - Park, Jin Hong

AU - Yu, Hyun Yong

N1 - Funding Information: This work was supported in part by the Basic Science Research Program within the Ministry of Science, ICT, and Future Planning through the National Research Foundation of Korea under grant 2017R1A2B4006460, in part by Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2016M3A7B4910426), and in part by the Nano Material Technology Development Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning under grant 2015M3A7B7045490. Publisher Copyright: © 2019 American Chemical Society.

PY - 2019/6/12

Y1 - 2019/6/12

N2 - Although molybdenum disulfide (MoS2) is highlighted as a promising channel material, MoS2-based field-effect transistors (FETs) have a large threshold voltage hysteresis (ΔVTH) from interface traps at their gate interfaces. In this work, the ΔVTH of MoS2 FETs is significantly reduced by inserting a 3-aminopropyltriethoxysilane (APTES) passivation layer at the MoS2/SiO2 gate interface owing to passivation of the interface traps. The ΔVTH is reduced from 23 to 10.8 V by inserting the 1%-APTES passivation layers because APTES passivation prevents trapping and detrapping of electrons, which are the major source of the ΔVTH. The reduction in the density of interface traps (Dit) is confirmed by the improvement of the subthreshold swing (SS) after inserting the APTES layer. Furthermore, the improvement in the synaptic characteristics of the MoS2 FET through the APTES passivation is investigated. Both inhibitory and excitatory postsynaptic currents (PSC) are increased by 33% owing to the reduction in the ΔVTH and the n-type doping effect of the APTES layer; moreover, the linearity of PSC characteristics is significantly improved because the reduction in ΔVTH enables the synaptic operation to be over the threshold region, which is linear. The application of the APTES gate passivation technique to MoS2 FETs is promising for reliable and accurate synaptic applications in neuromorphic computing technology as well as for the next-generation complementary logic applications.

AB - Although molybdenum disulfide (MoS2) is highlighted as a promising channel material, MoS2-based field-effect transistors (FETs) have a large threshold voltage hysteresis (ΔVTH) from interface traps at their gate interfaces. In this work, the ΔVTH of MoS2 FETs is significantly reduced by inserting a 3-aminopropyltriethoxysilane (APTES) passivation layer at the MoS2/SiO2 gate interface owing to passivation of the interface traps. The ΔVTH is reduced from 23 to 10.8 V by inserting the 1%-APTES passivation layers because APTES passivation prevents trapping and detrapping of electrons, which are the major source of the ΔVTH. The reduction in the density of interface traps (Dit) is confirmed by the improvement of the subthreshold swing (SS) after inserting the APTES layer. Furthermore, the improvement in the synaptic characteristics of the MoS2 FET through the APTES passivation is investigated. Both inhibitory and excitatory postsynaptic currents (PSC) are increased by 33% owing to the reduction in the ΔVTH and the n-type doping effect of the APTES layer; moreover, the linearity of PSC characteristics is significantly improved because the reduction in ΔVTH enables the synaptic operation to be over the threshold region, which is linear. The application of the APTES gate passivation technique to MoS2 FETs is promising for reliable and accurate synaptic applications in neuromorphic computing technology as well as for the next-generation complementary logic applications.

KW - 3-aminopropyltriethoxysilane

KW - molybdenum disulfide

KW - surface passivation

KW - synapse applications

KW - threshold voltage hysteresis

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