Reflective and low-resistance Zn/Rh contacts to p-type GaN for flip-chip light-emitting diodes

June O. Song; Woong Ki Hong; Hyun Gi Hong; Kyoung Kook Kim; Takhee Lee; Tae Yeon Seong

doi:10.1149/1.1960137

Reflective and low-resistance Zn/Rh contacts to p-type GaN for flip-chip light-emitting diodes

June O. Song, Woong Ki Hong, Hyun Gi Hong, Kyoung Kook Kim, Takhee Lee, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We report on the formation of high-quality ohmic contacts to p-type GaN (5 × 10¹⁷/cm³) using a Rh (100 nm) layer combined with a 3 nm thick Zn interlayer for high-power flip-chip light-emitting diodes (LEDs). The as-deposited sample produces a nonlinear behavior. However, the samples annealed at 430 and 530°C for 1 min in air become ohmic with a contact resistivity of ∼ 10^-5 Ω cm². Measurements show that the reflectivity of the samples annealed at 530°C is 73% at 460 nm. LEDs fabricated using the Zn/Rh contact layers give forward-bias voltages of 3.09-3.12 V at an injection current of 20 mA.

Original language	English
Pages (from-to)	G227-G229
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	9
DOIs	https://doi.org/10.1149/1.1960137
Publication status	Published - 2005
Externally published	Yes

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Reflective and low-resistance Zn/Rh contacts to p-type GaN for flip-chip light-emitting diodes",

abstract = "We report on the formation of high-quality ohmic contacts to p-type GaN (5 × 1017/cm3) using a Rh (100 nm) layer combined with a 3 nm thick Zn interlayer for high-power flip-chip light-emitting diodes (LEDs). The as-deposited sample produces a nonlinear behavior. However, the samples annealed at 430 and 530°C for 1 min in air become ohmic with a contact resistivity of ∼ 10-5 Ω cm2. Measurements show that the reflectivity of the samples annealed at 530°C is 73% at 460 nm. LEDs fabricated using the Zn/Rh contact layers give forward-bias voltages of 3.09-3.12 V at an injection current of 20 mA.",

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T1 - Reflective and low-resistance Zn/Rh contacts to p-type GaN for flip-chip light-emitting diodes

AU - Song, June O.

AU - Hong, Woong Ki

AU - Hong, Hyun Gi

AU - Kim, Kyoung Kook

AU - Lee, Takhee

AU - Seong, Tae Yeon

PY - 2005

Y1 - 2005

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AB - We report on the formation of high-quality ohmic contacts to p-type GaN (5 × 1017/cm3) using a Rh (100 nm) layer combined with a 3 nm thick Zn interlayer for high-power flip-chip light-emitting diodes (LEDs). The as-deposited sample produces a nonlinear behavior. However, the samples annealed at 430 and 530°C for 1 min in air become ohmic with a contact resistivity of ∼ 10-5 Ω cm2. Measurements show that the reflectivity of the samples annealed at 530°C is 73% at 460 nm. LEDs fabricated using the Zn/Rh contact layers give forward-bias voltages of 3.09-3.12 V at an injection current of 20 mA.

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Reflective and low-resistance Zn/Rh contacts to p-type GaN for flip-chip light-emitting diodes

Abstract

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