Abstract
We report on the formation of high-quality ohmic contacts to p-type GaN (5 × 1017/cm3) using a Rh (100 nm) layer combined with a 3 nm thick Zn interlayer for high-power flip-chip light-emitting diodes (LEDs). The as-deposited sample produces a nonlinear behavior. However, the samples annealed at 430 and 530°C for 1 min in air become ohmic with a contact resistivity of ∼ 10-5 Ω cm2. Measurements show that the reflectivity of the samples annealed at 530°C is 73% at 460 nm. LEDs fabricated using the Zn/Rh contact layers give forward-bias voltages of 3.09-3.12 V at an injection current of 20 mA.
Original language | English |
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Pages (from-to) | G227-G229 |
Journal | Electrochemical and Solid-State Letters |
Volume | 8 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2005 |
Externally published | Yes |
ASJC Scopus subject areas
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrochemistry
- Electrical and Electronic Engineering