Reliability and performance scaling of very high speed SiGe HBTs

Greg Freeman; Jae Sung Rieh; Zhijian Yang; Fernando Guarin

doi:10.1016/j.microrel.2003.11.003

Reliability and performance scaling of very high speed SiGe HBTs

Greg Freeman, Jae Sung Rieh, Zhijian Yang, Fernando Guarin

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We discuss the SiGe HBT structural changes required for very high performance. The increase in collector concentration, affecting current density and avalanche current, appears to be the most fundamental concern for reliability. In device design, a narrow emitter and reduced poly-single-crystal interfacial oxide are important elements in minimizing device parameter shifts. From the application point of view, avalanche hot-carriers appear to present new constraints, which may be managed through limiting voltage (to 1.5×-2× BV_CEO), or through circuit designs robust to base current parameter shifts.

Original language	English
Pages (from-to)	397-410
Number of pages	14
Journal	Microelectronics Reliability
Volume	44
Issue number	3
DOIs	https://doi.org/10.1016/j.microrel.2003.11.003
Publication status	Published - 2004 Mar
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Safety, Risk, Reliability and Quality
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.microrel.2003.11.003

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title = "Reliability and performance scaling of very high speed SiGe HBTs",

abstract = "We discuss the SiGe HBT structural changes required for very high performance. The increase in collector concentration, affecting current density and avalanche current, appears to be the most fundamental concern for reliability. In device design, a narrow emitter and reduced poly-single-crystal interfacial oxide are important elements in minimizing device parameter shifts. From the application point of view, avalanche hot-carriers appear to present new constraints, which may be managed through limiting voltage (to 1.5×-2× BVCEO), or through circuit designs robust to base current parameter shifts.",

author = "Greg Freeman and Rieh, {Jae Sung} and Zhijian Yang and Fernando Guarin",

note = "Funding Information: The authors would like to acknowledge partial support of this work by DARPA under SPAWAR contract number N66001-02-C-8014. The authors also would like to thank Seshadri Subbanna, Peter Cottrell and David Greenberg for their helpful discussions, and Dale Jadus and Michael Longstreet for their help in the device test.",

year = "2004",

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doi = "10.1016/j.microrel.2003.11.003",

language = "English",

volume = "44",

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journal = "Microelectronics and Reliability",

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T1 - Reliability and performance scaling of very high speed SiGe HBTs

AU - Freeman, Greg

AU - Rieh, Jae Sung

AU - Yang, Zhijian

AU - Guarin, Fernando

N1 - Funding Information: The authors would like to acknowledge partial support of this work by DARPA under SPAWAR contract number N66001-02-C-8014. The authors also would like to thank Seshadri Subbanna, Peter Cottrell and David Greenberg for their helpful discussions, and Dale Jadus and Michael Longstreet for their help in the device test.

PY - 2004/3

Y1 - 2004/3

N2 - We discuss the SiGe HBT structural changes required for very high performance. The increase in collector concentration, affecting current density and avalanche current, appears to be the most fundamental concern for reliability. In device design, a narrow emitter and reduced poly-single-crystal interfacial oxide are important elements in minimizing device parameter shifts. From the application point of view, avalanche hot-carriers appear to present new constraints, which may be managed through limiting voltage (to 1.5×-2× BVCEO), or through circuit designs robust to base current parameter shifts.

AB - We discuss the SiGe HBT structural changes required for very high performance. The increase in collector concentration, affecting current density and avalanche current, appears to be the most fundamental concern for reliability. In device design, a narrow emitter and reduced poly-single-crystal interfacial oxide are important elements in minimizing device parameter shifts. From the application point of view, avalanche hot-carriers appear to present new constraints, which may be managed through limiting voltage (to 1.5×-2× BVCEO), or through circuit designs robust to base current parameter shifts.

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DO - 10.1016/j.microrel.2003.11.003

M3 - Article

AN - SCOPUS:1142288213

SN - 0026-2714

VL - 44

SP - 397

EP - 410

JO - Microelectronics and Reliability

JF - Microelectronics and Reliability

IS - 3

ER -

Reliability and performance scaling of very high speed SiGe HBTs

Abstract

ASJC Scopus subject areas

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