Reliability of high-speed SiGe heterojunction bipolar transistors under very high forward current density

As device scaling for higher performance bipolar transistors continues, the operation current density increases as well. To investigate the reliability impact of the increased operation current density on Si-based bipolar transistors, an accelerated-current wafer-level stress was conducted on 120-GHz SiGe heterojunction bipolar transistors (HBTs), with stress current density up to as high as J_C = 34 mA//μm². With a novel projection technique based on accelerated-current stress, a current gain shift of less than ∼15% after 10⁶ h of operation is predicted at T = 140°C. Degradation mechanisms for the observed dc parameter shifts are discussed for various V_BE regions, and the separation of current stress effect from self-heating effect is made based on thermal resistance of the devices. Module-level stress results are shown to be consistent with wafer-level stress results. The results obtained in this work indicate that the high-speed SiGe HBTs employed for the stress are highly reliable for a long-term operation at the high operation current density.