Reliability of loss-coupled 1.55 μm DFB laser diode with automatically buried absorptive InAsP layer

Jae Ho Han; Sung Woong Park

doi:10.1002/mop.22208

Reliability of loss-coupled 1.55 μm DFB laser diode with automatically buried absorptive InAsP layer

Jae Ho Han, Sung Woong Park

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The authors achieved loss-coupled 1.55μm distributed feedback laser diode incorporating automatically buried absorptive layer implemented by a single step growth that simplifies device fabrication than those of conventional ones. Based on 2800 h of accelerated aging test, estimated lifetime is 1.4 × 10⁶ h at room temperature.

Original language	English
Pages (from-to)	636-638
Number of pages	3
Journal	Microwave and Optical Technology Letters
Volume	49
Issue number	3
DOIs	https://doi.org/10.1002/mop.22208
Publication status	Published - 2007 Mar
Externally published	Yes

Keywords

Laser reliability
Optoelectronic devices
Semiconductor lasers

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1002/mop.22208

Cite this

@article{a3fcaec8304f499f9ce7f79571a8b018,

title = "Reliability of loss-coupled 1.55 μm DFB laser diode with automatically buried absorptive InAsP layer",

abstract = "The authors achieved loss-coupled 1.55μm distributed feedback laser diode incorporating automatically buried absorptive layer implemented by a single step growth that simplifies device fabrication than those of conventional ones. Based on 2800 h of accelerated aging test, estimated lifetime is 1.4 × 106 h at room temperature.",

keywords = "Laser reliability, Optoelectronic devices, Semiconductor lasers",

author = "Han, {Jae Ho} and Park, {Sung Woong}",

year = "2007",

month = mar,

doi = "10.1002/mop.22208",

language = "English",

volume = "49",

pages = "636--638",

journal = "Microwave and Optical Technology Letters",

issn = "0895-2477",

publisher = "John Wiley & Sons Inc.",

number = "3",

}

TY - JOUR

T1 - Reliability of loss-coupled 1.55 μm DFB laser diode with automatically buried absorptive InAsP layer

AU - Han, Jae Ho

AU - Park, Sung Woong

PY - 2007/3

Y1 - 2007/3

N2 - The authors achieved loss-coupled 1.55μm distributed feedback laser diode incorporating automatically buried absorptive layer implemented by a single step growth that simplifies device fabrication than those of conventional ones. Based on 2800 h of accelerated aging test, estimated lifetime is 1.4 × 106 h at room temperature.

AB - The authors achieved loss-coupled 1.55μm distributed feedback laser diode incorporating automatically buried absorptive layer implemented by a single step growth that simplifies device fabrication than those of conventional ones. Based on 2800 h of accelerated aging test, estimated lifetime is 1.4 × 106 h at room temperature.

KW - Laser reliability

KW - Optoelectronic devices

KW - Semiconductor lasers

UR - http://www.scopus.com/inward/record.url?scp=33847723040&partnerID=8YFLogxK

U2 - 10.1002/mop.22208

DO - 10.1002/mop.22208

M3 - Article

AN - SCOPUS:33847723040

SN - 0895-2477

VL - 49

SP - 636

EP - 638

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 3

ER -

Reliability of loss-coupled 1.55 μm DFB laser diode with automatically buried absorptive InAsP layer

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this