Reliability of microwave SiGe/Si heterojunction bipolar transistors

Zhenqiang Ma; Pallab Bhattacharya; Jae Sung Rieh; George E. Ponchak; Samuel A. Alterovitz; Edward T. Croke

doi:10.1109/7260.959308

Reliability of microwave SiGe/Si heterojunction bipolar transistors

Zhenqiang Ma, Pallab Bhattacharya, Jae Sung Rieh, George E. Ponchak, Samuel A. Alterovitz, Edward T. Croke

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The degradation behavior of NPN Si/SiGe/Si heterojunction bipolar transistors, grown by solid-source molecular beam epitaxy (MBE), has been studied by accelerated lifetime testing at different ambient temperatures. The degradations of the dc current gain and the microwave performance of the devices are explained in terms of recombination enhanced impurity diffusion (REID) of boron atoms from the base region and the subsequent formation of parasitic energy barriers at the base-emitter and base-collector junctions.

Original language	English
Pages (from-to)	401-403
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	11
Issue number	10
DOIs	https://doi.org/10.1109/7260.959308
Publication status	Published - 2001 Oct
Externally published	Yes

Bibliographical note

Funding Information:
Manuscript received April 9, 2001; revised August 2, 2001. This work was supported by NASA-GRC under Grant NAG3-2237. The review of this letter was arranged by Associated Editor Dr. Arvind Sharma. Z. Ma, P. Bhattacharya, and J.-S. Rieh are with the Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122 USA. G. E. Ponchak and S. A. Alterovitz are with the NASA Glenn Research Center, Cleveland, OH 44135 USA. E. T. Croke is with HRL Laboratories, LLC, Malibu, CA 90265 USA. Publisher Item Identifier S 1531-1309(01)09486-7.

Keywords

Accelerated lifetime testing
HBT reliability
REID
SiGe HBT

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/7260.959308

Cite this

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abstract = "The degradation behavior of NPN Si/SiGe/Si heterojunction bipolar transistors, grown by solid-source molecular beam epitaxy (MBE), has been studied by accelerated lifetime testing at different ambient temperatures. The degradations of the dc current gain and the microwave performance of the devices are explained in terms of recombination enhanced impurity diffusion (REID) of boron atoms from the base region and the subsequent formation of parasitic energy barriers at the base-emitter and base-collector junctions.",

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note = "Funding Information: Manuscript received April 9, 2001; revised August 2, 2001. This work was supported by NASA-GRC under Grant NAG3-2237. The review of this letter was arranged by Associated Editor Dr. Arvind Sharma. Z. Ma, P. Bhattacharya, and J.-S. Rieh are with the Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122 USA. G. E. Ponchak and S. A. Alterovitz are with the NASA Glenn Research Center, Cleveland, OH 44135 USA. E. T. Croke is with HRL Laboratories, LLC, Malibu, CA 90265 USA. Publisher Item Identifier S 1531-1309(01)09486-7.",

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AU - Ponchak, George E.

AU - Alterovitz, Samuel A.

AU - Croke, Edward T.

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Reliability of microwave SiGe/Si heterojunction bipolar transistors

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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