Reliability of microwave SiGe/Si heterojunction bipolar transistors

Zhenqiang Ma, Pallab Bhattacharya, Jae Sung Rieh, George E. Ponchak, Samuel A. Alterovitz, Edward T. Croke

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


The degradation behavior of NPN Si/SiGe/Si heterojunction bipolar transistors, grown by solid-source molecular beam epitaxy (MBE), has been studied by accelerated lifetime testing at different ambient temperatures. The degradations of the dc current gain and the microwave performance of the devices are explained in terms of recombination enhanced impurity diffusion (REID) of boron atoms from the base region and the subsequent formation of parasitic energy barriers at the base-emitter and base-collector junctions.

Original languageEnglish
Pages (from-to)401-403
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Issue number10
Publication statusPublished - 2001 Oct
Externally publishedYes

Bibliographical note

Funding Information:
Manuscript received April 9, 2001; revised August 2, 2001. This work was supported by NASA-GRC under Grant NAG3-2237. The review of this letter was arranged by Associated Editor Dr. Arvind Sharma. Z. Ma, P. Bhattacharya, and J.-S. Rieh are with the Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122 USA. G. E. Ponchak and S. A. Alterovitz are with the NASA Glenn Research Center, Cleveland, OH 44135 USA. E. T. Croke is with HRL Laboratories, LLC, Malibu, CA 90265 USA. Publisher Item Identifier S 1531-1309(01)09486-7.


  • Accelerated lifetime testing
  • HBT reliability
  • REID
  • SiGe HBT

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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