Abstract
We have estimated the lifetime of InGaAsP/InP laser diodes mounted on different heat block sizes. From an accelerated aging test of laser diodes mounted on the different sizes of heat blocks in TO cans, we have found the difference in the reliability performance. The median normalized degradation ratios (NDRs) of large block (1.4 mm × 1.7 mm2) samples are 1.22%/kh and 0.26%/kh at 40°C for laser diodes from A and B wafers, respectively. For the small block (1.3 mm × 0.9 mm2) samples, the median NDRs are 1.44%/kh and 0.48%/kh for laser diodes from A and B wafers. The reliability performance is better for lasers mounted on the large block samples. The difference in reliability performance due to the heat block size can be explained by developing the heat transfer model. The surface size of heat blocks is the important parameter to retard the degradation process due to the junction temperature difference and then improve reliability performance.
| Original language | English |
|---|---|
| Pages (from-to) | 1969-1974 |
| Number of pages | 6 |
| Journal | Solid-State Electronics |
| Volume | 42 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 1998 Nov |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry