Reliable organic nonvolatile memory device using a polyfluorene-derivative single-layer film

Tae Wook Kim, Seung Hwan Oh, Hyejung Choi, Gunuk Wang, Hyunsang Hwang, Dong Yu Kim, Takhee Lee

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

This letter describes the reversible switching performance of etal-organic-semiconductor (MOS) memory devices containing a polyfluorene-derivative single-layer film. The space-charge-limited current contributes to the switching behavior of WPF-oxy-F memory devices. The polyfluorene derivative reported here provides a significant advance to the field of organic semiconductors because it provides a type of organic memory material for nonvolatile memory devices. The following properties are responsible for its memory capabilities: its use of a single-layer film, a large on/off ratio (Ion/Ioff ∼104), a long retention time (more than 10 000 s), acceptable thermal stability up to 120 °C, and an excellent device-to-device switching uniformity.

Original languageEnglish
Pages (from-to)852-855
Number of pages4
JournalIEEE Electron Device Letters
Volume29
Issue number8
DOIs
Publication statusPublished - 2008 Aug
Externally publishedYes

Bibliographical note

Funding Information:
Manuscript received March 14, 2008. This work was supported in part by the National Research Laboratory (NRL) Programs of the Korean Science and Engineering Foundation (KOSEF), by the Program for Integrated Molecular System at GIST, and by the SystemIC2010 project of the Korean Ministry of Commerce, Industry and Energy. The review of this letter was arranged by Editor T. Wang.

Keywords

  • Organic memory device
  • Polyfluorene derivative
  • Reversible switching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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