Remote doping and Schottky barrier formation in strongly quantum confined single PbSe nanowire field-effect transistors

Engineering & Materials Science

• Nanowires 90%
• Doping (additives) 81%
• Field effect transistors 77%
• Electron scattering 44%
• Phonon scattering 43%
• Fermi level 42%
• Hole mobility 40%
• Electron mobility 38%
• Semiconductor doping 36%
• Charge injection 35%
• Charge transfer 31%
• Nanostructures 29%
• Temperature 29%
• Crystalline materials 25%
• Scattering 22%
• Oxygen 19%

Chemical Compounds

• Schottky Barrier 100%
• Field Effect 72%
• Nanowire 63%
• Electron-Phonon Scattering 46%
• Electron Mobility 29%
• Hole Mobility 28%
• Fermi Level 28%
• Semiconductor 18%
• Nanomaterial 15%
• Dioxygen 11%
• Surface 7%

Physics & Astronomy

• nanowires 58%
• field effect transistors 57%
• hole mobility 27%
• electron mobility 24%
• scattering 24%
• routes 20%
• injection 17%
• phonons 16%
• oxygen 14%
• electrons 10%
• temperature 7%