Doping is required to modulate the electrical properties of semiconductors but introduces impurities that lead to Coulomb scattering, which hampers charge transport. Such scattering is a particular issue in two-dimensional semiconductors because charged impurities are in close proximity to the atomically thin channel. Here we report the remote modulation doping of a two-dimensional transistor that consists of a band-modulated tungsten diselenide/hexagonal boron nitride/molybdenum disulfide heterostructure. The underlying molybdenum disulfide channel is remotely doped via controlled charge transfer from dopants on the tungsten diselenide surface. The modulation-doped device exhibits two-dimensional-confined charge transport and the suppression of impurity scattering, shown by increasing mobility with decreasing temperature. Our molybdenum disulfide modulation-doped field-effect transistors exhibit a room-temperature mobility of 60 cm2 V–1 s–1; in comparison, transistors that have been directly doped exhibit a mobility of 35 cm2 V–1 s–1.
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation (NRF) of Korea (2021M3H4A1A01079471, 2020R1A2C2009389, 2017R1A5A1014862 (SRC Program: vdWMRC center) and 2020M3H3A1105796) and the KU-KIST School Project. D.L. acknowledges support from the Basic Science Research Program through the NRF of Korea funded by the Ministry of Education (2020R1I1A1A01071872). Y.D.K. and J.J.L. acknowledge support from the NRF of Korea (2021M3H4A1A03054856). Low-temperature measurements were supported by a grant from Kyung Hee University in 2019 (KHU-20192441).
© 2021, The Author(s), under exclusive licence to Springer Nature Limited.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering