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Remote modulation doping in van der Waals heterostructure transistors
Donghun Lee
*
, Jea Jung Lee
, Yoon Seok Kim
, Yeon Ho Kim
, Jong Chan Kim
, Woong Huh
, Jaeho Lee
, Sungmin Park
, Hu Young Jeong
, Young Duck Kim
, Chul Ho Lee
*
*
Corresponding author for this work
Research output
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Contribution to journal
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Article
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peer-review
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Keyphrases
Transistor
100%
Molybdenite
100%
Modulation Doping
100%
Van Der Waals Heterostructures
100%
Remote Modulation
100%
Charge Transport
66%
Modulation-doped
66%
Tungsten Diselenide
66%
Electrical Properties
33%
Room Temperature
33%
Impurities
33%
Heterostructure
33%
Two Dimensional
33%
Semiconductors
33%
Dopant
33%
Charge Transfer
33%
Close Proximity
33%
Decreasing Temperature
33%
Field-effect Transistors
33%
Atomically Thin
33%
Doped Device
33%
Hexagonal Boron Nitride (h-BN)
33%
Impurity Scattering
33%
Coulomb Scattering
33%
Thin Channel
33%
2D Semiconductors
33%
Charged Impurity
33%
Two-dimensional Transistors
33%
Physics
Modulation Doping
100%
Van Der Waals Heterostructures
100%
Charge Transfer
100%
Heterojunctions
50%
Room Temperature
50%
Field Effect Transistor
50%
Hexagonal Boron Nitride
50%
Electrical Property
50%
Material Science
Heterojunction
100%
Transistor
100%
Molybdenum
100%
Tungsten
66%
Doping (Additives)
33%
Field Effect Transistor
33%
Boron Nitride
33%
Surface (Surface Science)
33%
Electrical Property of Semiconductor
33%
Chemistry
Molybdenum Disulfide
100%
Diselenide
66%
Charge Transfer
66%
Ambient Reaction Temperature
33%
Doping Material
33%
Field Effect
33%
Electrical Property
33%
Boron Nitride
33%
Chemical Engineering
Boron Nitride
100%