Abstract
In this study, we adopted a current line to produce a localized amperian field and demonstrate the resistance modulation of an InAs two-dimensional electron gas channel with the amperian field. The wafer structure is InAlAs(6 nm)/InGaAs(2.5 nm)/InAsSQW(2 nm)/InGaAs(13.5 nm)/InAlAs(20 nm). A 90-nm-thick and 3.2-μm-wide gold line, perpendicular to the mesa pattern, was adopted as a source of amperian field. Resistance changes of the mesa wherein the amperian gold line is positioned were measured with a sensing current of 20 μA. We obtained 10% of resistance change (R(IAu=10 mA)-R(IAu=0))/R(IAu=0) with the current density, JAu=3.47×106 A/cm2, which is comparable with that of the MRAM digit line. The resistance change increases with the amperian current. This result seems to be related to weak localization in the InAs 2DEG system and shows the feasibility of an amperian device to control the resistance of the InAs 2DEG system.
| Original language | English |
|---|---|
| Pages (from-to) | 1952-1954 |
| Number of pages | 3 |
| Journal | Journal of Magnetism and Magnetic Materials |
| Volume | 310 |
| Issue number | 2 SUPPL. PART 3 |
| DOIs | |
| Publication status | Published - 2007 Mar |
| Externally published | Yes |
Bibliographical note
Funding Information:This work was supported by the KIST VISION 21 Program.
Keywords
- Amperian field
- InAs
- Spin FET
- Two-dimensional electron gas
- Weak localization
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics