Resistance switching memory devices constructed on flexible plastic substrates via the spin-coating of titanium oxide solution were characterized in this study. The resistance switching memory device exhibited a ratio of the high resistance to low resistance states of more than 102, and this large resistance ratio was maintained even after 104 s. These memory characteristics are comparable to those of resistance switching memory devices based on titanium oxide films deposited on Si substrates. Moreover, the endurance of the flexible memory device investigated by means of a continuous substrate bending test revealed that the ratio of the high resistance to low resistance states was negligibly changed up to two hundred cycles. Its resistance switching characteristics were not degraded by the bending of the substrate, due to its short length channel and the high ductility of the electrode.
|Number of pages||4|
|Journal||Journal of Materials Chemistry|
|Publication status||Published - 2009|
ASJC Scopus subject areas
- Materials Chemistry