Resistive switching behavior in a Ni-Ag2Se-Ni nanowire

N. J. Lee; B. H. An; A. Y. Koo; H. M. Ji; J. W. Cho; Y. J. Choi; Y. K. Kim; C. J. Kang

doi:10.1007/s00339-011-6319-y

Resistive switching behavior in a Ni-Ag₂Se-Ni nanowire

N. J. Lee
, B. H. An
, A. Y. Koo
, H. M. Ji
, J. W. Cho
, Y. J. Choi
, Y. K. Kim
, C. J. Kang

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Hysteretic resistive switching behavior in a silver selenide (Ag ₂Se) nanowire, which had a diameter of about 200 nm and a length of about 10 μm, was studied using scanning probe microscopy. Electrical current measurements were carried out in a range from 0 to -10 V and in temperatures below and above the phase transition of Ag₂Se. ON/OFF switching times were measured with pulsed voltages. They displayed different characteristics at low and high temperatures. The results confirm that Ag₂Se nanowires have applications in nanoscale switching devices.

Original language	English
Pages (from-to)	897-900
Number of pages	4
Journal	Applied Physics A: Materials Science and Processing
Volume	102
Issue number	4
DOIs	https://doi.org/10.1007/s00339-011-6319-y
Publication status	Published - 2011 Mar

ASJC Scopus subject areas

General Chemistry
General Materials Science

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title = "Resistive switching behavior in a Ni-Ag2Se-Ni nanowire",

abstract = "Hysteretic resistive switching behavior in a silver selenide (Ag 2Se) nanowire, which had a diameter of about 200 nm and a length of about 10 μm, was studied using scanning probe microscopy. Electrical current measurements were carried out in a range from 0 to -10 V and in temperatures below and above the phase transition of Ag2Se. ON/OFF switching times were measured with pulsed voltages. They displayed different characteristics at low and high temperatures. The results confirm that Ag2Se nanowires have applications in nanoscale switching devices.",

author = "Lee, \{N. J.\} and An, \{B. H.\} and Koo, \{A. Y.\} and Ji, \{H. M.\} and Cho, \{J. W.\} and Choi, \{Y. J.\} and Kim, \{Y. K.\} and Kang, \{C. J.\}",

year = "2011",

month = mar,

doi = "10.1007/s00339-011-6319-y",

language = "English",

volume = "102",

pages = "897--900",

journal = "Applied Physics A: Materials Science and Processing",

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TY - JOUR

T1 - Resistive switching behavior in a Ni-Ag2Se-Ni nanowire

AU - Lee, N. J.

AU - An, B. H.

AU - Koo, A. Y.

AU - Ji, H. M.

AU - Cho, J. W.

AU - Choi, Y. J.

AU - Kim, Y. K.

AU - Kang, C. J.

PY - 2011/3

Y1 - 2011/3

N2 - Hysteretic resistive switching behavior in a silver selenide (Ag 2Se) nanowire, which had a diameter of about 200 nm and a length of about 10 μm, was studied using scanning probe microscopy. Electrical current measurements were carried out in a range from 0 to -10 V and in temperatures below and above the phase transition of Ag2Se. ON/OFF switching times were measured with pulsed voltages. They displayed different characteristics at low and high temperatures. The results confirm that Ag2Se nanowires have applications in nanoscale switching devices.

AB - Hysteretic resistive switching behavior in a silver selenide (Ag 2Se) nanowire, which had a diameter of about 200 nm and a length of about 10 μm, was studied using scanning probe microscopy. Electrical current measurements were carried out in a range from 0 to -10 V and in temperatures below and above the phase transition of Ag2Se. ON/OFF switching times were measured with pulsed voltages. They displayed different characteristics at low and high temperatures. The results confirm that Ag2Se nanowires have applications in nanoscale switching devices.

UR - https://www.scopus.com/pages/publications/79959362806

U2 - 10.1007/s00339-011-6319-y

DO - 10.1007/s00339-011-6319-y

M3 - Article

AN - SCOPUS:79959362806

SN - 0947-8396

VL - 102

SP - 897

EP - 900

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 4

ER -

Resistive switching behavior in a Ni-Ag₂Se-Ni nanowire

Abstract

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