Resistive-switching behavior in Ti/Si 3N 4/Ti memory structures for ReRAM applications

Hee Dong Kim, Ho Myoung An, Tae Geun Kim

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


In this paper, the resistive-switching behavior of Si 3N 4 films using nitride-related traps in Ti/Si 3N 4/Ti memory cells is reported. Bipolar resistive switching behavior was clearly observed at a low voltage of about ±2.5 V. Compared to Au/Si 3N 4/Ti memory cells, the set and reset current of Ti/Si 3N 4/Ti memory cells was decreased from 5 μA and 1.5 mA to 40 nA and 1 μA, respectively, at V read = 0.1 V. In addition, Ti/Si 3N 4/Ti memory cells showed improved endurance characteristics over 2.7 × 10 3 cycles.

Original languageEnglish
Pages (from-to)351-354
Number of pages4
JournalMicroelectronic Engineering
Publication statusPublished - 2012 Oct

Bibliographical note

Funding Information:
This work was supported by the Seoul R&BD Program (No. ST100024 ) as well as the Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST) (No. 2010-00218 ).


  • Resistive switching memory
  • Si N
  • Space charge limited current

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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