Resistive switching characteristics of polycrystalline SrTiO3 films

Hyung Jong Choi; Suk Won Park; Gwon Deok Han; Junhong Na; Gyu Tae Kim; Joon Hyung Shim

doi:10.1063/1.4883646

Resistive switching characteristics of polycrystalline SrTiO₃ films

Hyung Jong Choi, Suk Won Park, Gwon Deok Han, Junhong Na, Gyu Tae Kim, Joon Hyung Shim

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Strontium titanate (STO) thin films 90 nm in thickness were grown on a Pt substrate through atomic layer deposition (ALD). The as-deposited ALD STO grown with an ALD cycle ratio of 1:1 (Sr:Ti) was in an amorphous phase, and annealing at 800 °C in air crystallized the films into the perovskite phase. This phase change was confirmed by x-ray diffraction and transmission electron microscopy. The as-deposited ALD STO exhibited no discernible switching mechanism, whereas unipolar switching behavior was reproducibly observed with a high resistance ratio (10⁸-10⁹) and strict separation of the set/reset voltages and currents in the annealed ALD STO. Mechanisms for charge transport in both the low- and high-resistance states and for resistive switching in the annealed ALD STO are also proposed.

Original language	English
Article number	242105
Journal	Applied Physics Letters
Volume	104
Issue number	24
DOIs	https://doi.org/10.1063/1.4883646
Publication status	Published - 2014 Jun 16

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Resistive switching characteristics of polycrystalline SrTiO3 films",

abstract = "Strontium titanate (STO) thin films 90 nm in thickness were grown on a Pt substrate through atomic layer deposition (ALD). The as-deposited ALD STO grown with an ALD cycle ratio of 1:1 (Sr:Ti) was in an amorphous phase, and annealing at 800 °C in air crystallized the films into the perovskite phase. This phase change was confirmed by x-ray diffraction and transmission electron microscopy. The as-deposited ALD STO exhibited no discernible switching mechanism, whereas unipolar switching behavior was reproducibly observed with a high resistance ratio (108-109) and strict separation of the set/reset voltages and currents in the annealed ALD STO. Mechanisms for charge transport in both the low- and high-resistance states and for resistive switching in the annealed ALD STO are also proposed.",

author = "{Jong Choi}, Hyung and {Won Park}, Suk and {Deok Han}, Gwon and Junhong Na and Kim, {Gyu Tae} and {Hyung Shim}, Joon",

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T1 - Resistive switching characteristics of polycrystalline SrTiO3 films

AU - Jong Choi, Hyung

AU - Won Park, Suk

AU - Deok Han, Gwon

AU - Na, Junhong

AU - Kim, Gyu Tae

AU - Hyung Shim, Joon

PY - 2014/6/16

Y1 - 2014/6/16

N2 - Strontium titanate (STO) thin films 90 nm in thickness were grown on a Pt substrate through atomic layer deposition (ALD). The as-deposited ALD STO grown with an ALD cycle ratio of 1:1 (Sr:Ti) was in an amorphous phase, and annealing at 800 °C in air crystallized the films into the perovskite phase. This phase change was confirmed by x-ray diffraction and transmission electron microscopy. The as-deposited ALD STO exhibited no discernible switching mechanism, whereas unipolar switching behavior was reproducibly observed with a high resistance ratio (108-109) and strict separation of the set/reset voltages and currents in the annealed ALD STO. Mechanisms for charge transport in both the low- and high-resistance states and for resistive switching in the annealed ALD STO are also proposed.

AB - Strontium titanate (STO) thin films 90 nm in thickness were grown on a Pt substrate through atomic layer deposition (ALD). The as-deposited ALD STO grown with an ALD cycle ratio of 1:1 (Sr:Ti) was in an amorphous phase, and annealing at 800 °C in air crystallized the films into the perovskite phase. This phase change was confirmed by x-ray diffraction and transmission electron microscopy. The as-deposited ALD STO exhibited no discernible switching mechanism, whereas unipolar switching behavior was reproducibly observed with a high resistance ratio (108-109) and strict separation of the set/reset voltages and currents in the annealed ALD STO. Mechanisms for charge transport in both the low- and high-resistance states and for resistive switching in the annealed ALD STO are also proposed.

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Resistive switching characteristics of polycrystalline SrTiO₃ films

Abstract

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