Resistive switching characteristics of Pr0.7Ca0.3MnO3 thin films grown on glass substrates by pulsed laser deposition

D. S. Kim; Y. H. Kim; C. E. Lee; Y. T. Kim

doi:10.1016/j.tsf.2006.08.011

Resistive switching characteristics of Pr_0.7Ca_0.3MnO₃ thin films grown on glass substrates by pulsed laser deposition

D. S. Kim, Y. H. Kim, C. E. Lee, Y. T. Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Pr_0.7Ca_0.3MnO₃ (PCMO) thin films were prepared on glass substrates by pulsed laser deposition and their resistive switching characteristics were investigated on a structure comprised of Ag/PCMO/Ag/glass. The PCMO films were grown with a (112) preferred orientation on Ag/glass substrates due to crystalline Ag layer. The crystalline PCMO films exhibited resistive switching characteristics by polarity change of bias voltage. The resistance ratio of high resistance state and low resistance state was enhanced by improvement of crystallinity of the PCMO film. The maximum resistance ratio obtained in this work was ∼ 4.2. Finally, the resistive switching of the PCMO films observed in this work is expected to make it possible to integrate the non-volatile memory devices on glass substrates.

Original language	English
Pages (from-to)	2573-2576
Number of pages	4
Journal	Thin Solid Films
Volume	515
Issue number	4
DOIs	https://doi.org/10.1016/j.tsf.2006.08.011
Publication status	Published - 2006 Dec 5

Keywords

Glass substrate
PrCaMnO thin film
Pulsed laser deposition
Resistive switching

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2006.08.011

Cite this

@article{e3e7b8bbf76840f28a5a836098dd3661,

title = "Resistive switching characteristics of Pr0.7Ca0.3MnO3 thin films grown on glass substrates by pulsed laser deposition",

abstract = "Pr0.7Ca0.3MnO3 (PCMO) thin films were prepared on glass substrates by pulsed laser deposition and their resistive switching characteristics were investigated on a structure comprised of Ag/PCMO/Ag/glass. The PCMO films were grown with a (112) preferred orientation on Ag/glass substrates due to crystalline Ag layer. The crystalline PCMO films exhibited resistive switching characteristics by polarity change of bias voltage. The resistance ratio of high resistance state and low resistance state was enhanced by improvement of crystallinity of the PCMO film. The maximum resistance ratio obtained in this work was ∼ 4.2. Finally, the resistive switching of the PCMO films observed in this work is expected to make it possible to integrate the non-volatile memory devices on glass substrates.",

keywords = "Glass substrate, PrCaMnO thin film, Pulsed laser deposition, Resistive switching",

author = "Kim, {D. S.} and Kim, {Y. H.} and Lee, {C. E.} and Kim, {Y. T.}",

year = "2006",

month = dec,

day = "5",

doi = "10.1016/j.tsf.2006.08.011",

language = "English",

volume = "515",

pages = "2573--2576",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "4",

}

TY - JOUR

T1 - Resistive switching characteristics of Pr0.7Ca0.3MnO3 thin films grown on glass substrates by pulsed laser deposition

AU - Kim, D. S.

AU - Kim, Y. H.

AU - Lee, C. E.

AU - Kim, Y. T.

PY - 2006/12/5

Y1 - 2006/12/5

N2 - Pr0.7Ca0.3MnO3 (PCMO) thin films were prepared on glass substrates by pulsed laser deposition and their resistive switching characteristics were investigated on a structure comprised of Ag/PCMO/Ag/glass. The PCMO films were grown with a (112) preferred orientation on Ag/glass substrates due to crystalline Ag layer. The crystalline PCMO films exhibited resistive switching characteristics by polarity change of bias voltage. The resistance ratio of high resistance state and low resistance state was enhanced by improvement of crystallinity of the PCMO film. The maximum resistance ratio obtained in this work was ∼ 4.2. Finally, the resistive switching of the PCMO films observed in this work is expected to make it possible to integrate the non-volatile memory devices on glass substrates.

AB - Pr0.7Ca0.3MnO3 (PCMO) thin films were prepared on glass substrates by pulsed laser deposition and their resistive switching characteristics were investigated on a structure comprised of Ag/PCMO/Ag/glass. The PCMO films were grown with a (112) preferred orientation on Ag/glass substrates due to crystalline Ag layer. The crystalline PCMO films exhibited resistive switching characteristics by polarity change of bias voltage. The resistance ratio of high resistance state and low resistance state was enhanced by improvement of crystallinity of the PCMO film. The maximum resistance ratio obtained in this work was ∼ 4.2. Finally, the resistive switching of the PCMO films observed in this work is expected to make it possible to integrate the non-volatile memory devices on glass substrates.

KW - Glass substrate

KW - PrCaMnO thin film

KW - Pulsed laser deposition

KW - Resistive switching

UR - http://www.scopus.com/inward/record.url?scp=33750823277&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750823277&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2006.08.011

DO - 10.1016/j.tsf.2006.08.011

M3 - Article

AN - SCOPUS:33750823277

SN - 0040-6090

VL - 515

SP - 2573

EP - 2576

JO - Thin Solid Films

JF - Thin Solid Films

IS - 4

ER -