Abstract
The authors report the resistive switching characteristics of sol-gel based ZnO nanorods (NRs) fabricated on flexible substrates. A resistance ratio of 10, endurance of over 100 cycles, and narrower dispersion in the ON/OFF voltages and resistances compared to ZnO thin-film devices are demonstrated. Furthermore, the resistive switching characteristics on flexible substrates are maintained under severe substrate bending because of the ductile properties of the nanorods. Devices composed of the Au/sol-gel based NRs/Au structure have the potential for low-temperature flexible nonvolatile memory applications.
| Original language | English |
|---|---|
| Pages (from-to) | 493-496 |
| Number of pages | 4 |
| Journal | Physica Status Solidi - Rapid Research Letters |
| Volume | 7 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2013 Jul |
Keywords
- Nanorods
- Resistive switching
- Sol-gel method
- ZnO
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
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