Resistive switching characteristics of UV-assisted room-temperature-fabricated top-electrode-free SnO_xReRAM

Keyphrases

• 2-Methoxyethanol 16%
• Acac 16%
• Acetylacetonate 16%
• Coffee-ring Effect 16%
• Electrode-free 100%
• Ethanol 16%
• Field Emission Scanning Electron Microscopy (FE-SEM) 16%
• Film Thickness 16%
• High Resistive State 16%
• ITO Electrode 16%
• Low Resistive State 16%
• Ohmic Conduction 16%
• Probe Tip 16%
• Radiation Effects 16%
• Resistive Random Access Memory (ReRAM) 33%
• Resistive Switching 100%
• Room Temperature 100%
• SnOx 33%
• SnOx Thin Films 33%
• Space Charge Limited Conduction 16%
• Spin Coating 16%
• Sweeping 16%
• Switching Cycle 16%
• Switching Layer 16%
• Tin Ion 16%
• Tin(II) 16%
• Top Electrode 100%
• Tungsten Probe 16%
• UV Radiation 66%
• UV-assisted 100%
• X-ray Photoelectron Spectroscopy 16%

Material Science

• Film Thickness 50%
• Indium Tin Oxide 50%
• Photoemission Spectroscopy 50%
• Scanning Electron Microscopy 50%
• Spin Coating 50%
• Thin Films 100%
• Tin 100%
• Tungsten 50%

Engineering

• Field Emission Scanning Electron Microscope 11%
• Low Resistive State 11%
• Ohmic Conduction 11%
• Probe Tip 11%
• Random Access Memory 22%
• Ray Photoelectron Spectroscopy 11%
• Resistive 100%
• Room Temperature 100%
• Space Charge 11%
• Thin Films 22%