Resistive Switching Memory Integrated with Nanogenerator for Self-Powered Bioimplantable Devices

Bo Yun Kim; Woong Hee Lee; Hyun Gyu Hwang; Dong Ha Kim; Jeong Hun Kim; Sang Hoon Lee; Sahn Nahm

doi:10.1002/adfm.201505569

Resistive Switching Memory Integrated with Nanogenerator for Self-Powered Bioimplantable Devices

Bo Yun Kim, Woong Hee Lee, Hyun Gyu Hwang, Dong Ha Kim, Jeong Hun Kim, Sang Hoon Lee, Sahn Nahm

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

52 Citations (Scopus)

Abstract

Resistive random access memory (ReRAM) devices powered by piezoelectric nanogenerators (NGs) have been investigated for their application to future implantable biomedical devices. Biocompatible (Na_0.5K_0.5)NbO₃ (NKN) films that are grown at 300 °C on TiN/SiO₂/Si and flexible TiN/Polyimide (TiN-PI) substrates are used for ReRAM and NGs, respectively. These NKN films have an amorphous phase containing NKN nanocrystals with a size of 5.0 nm. NKN ReRAM devices exhibit typical bipolar switching behavior that can be explained by the formation and rupture of oxygen-vacancy filaments. They have good ReRAM properties such as a large ratio of R_HRS to R_LRS as well as high reliability. The NKN film grown on flexible TiN-PI substrate exhibits a high piezoelectric strain constant of 50 pm V⁻¹. The NKN NG has a large open-circuit output voltage of 2.0 V and a short-circuit output current of 40 nA, which are sufficient to drive NKN ReRAM devices. Stable switching properties with a large ON/OFF ratio of 10² are obtained from NKN ReRAM driven by NKN NG.

Original language	English
Pages (from-to)	5211-5221
Number of pages	11
Journal	Advanced Functional Materials
Volume	26
Issue number	29
DOIs	https://doi.org/10.1002/adfm.201505569
Publication status	Published - 2016 Aug 2

Bibliographical note

Publisher Copyright:
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Keywords

NKN thin films
ReRAMs
implantable biomedical applications
nanogenerators
self-powered systems

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Chemistry
Biomaterials
General Materials Science
Condensed Matter Physics
Electrochemistry

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title = "Resistive Switching Memory Integrated with Nanogenerator for Self-Powered Bioimplantable Devices",

abstract = "Resistive random access memory (ReRAM) devices powered by piezoelectric nanogenerators (NGs) have been investigated for their application to future implantable biomedical devices. Biocompatible (Na0.5K0.5)NbO3 (NKN) films that are grown at 300 °C on TiN/SiO2/Si and flexible TiN/Polyimide (TiN-PI) substrates are used for ReRAM and NGs, respectively. These NKN films have an amorphous phase containing NKN nanocrystals with a size of 5.0 nm. NKN ReRAM devices exhibit typical bipolar switching behavior that can be explained by the formation and rupture of oxygen-vacancy filaments. They have good ReRAM properties such as a large ratio of RHRS to RLRS as well as high reliability. The NKN film grown on flexible TiN-PI substrate exhibits a high piezoelectric strain constant of 50 pm V−1. The NKN NG has a large open-circuit output voltage of 2.0 V and a short-circuit output current of 40 nA, which are sufficient to drive NKN ReRAM devices. Stable switching properties with a large ON/OFF ratio of 102 are obtained from NKN ReRAM driven by NKN NG.",

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AU - Kim, Jeong Hun

AU - Lee, Sang Hoon

AU - Nahm, Sahn

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AB - Resistive random access memory (ReRAM) devices powered by piezoelectric nanogenerators (NGs) have been investigated for their application to future implantable biomedical devices. Biocompatible (Na0.5K0.5)NbO3 (NKN) films that are grown at 300 °C on TiN/SiO2/Si and flexible TiN/Polyimide (TiN-PI) substrates are used for ReRAM and NGs, respectively. These NKN films have an amorphous phase containing NKN nanocrystals with a size of 5.0 nm. NKN ReRAM devices exhibit typical bipolar switching behavior that can be explained by the formation and rupture of oxygen-vacancy filaments. They have good ReRAM properties such as a large ratio of RHRS to RLRS as well as high reliability. The NKN film grown on flexible TiN-PI substrate exhibits a high piezoelectric strain constant of 50 pm V−1. The NKN NG has a large open-circuit output voltage of 2.0 V and a short-circuit output current of 40 nA, which are sufficient to drive NKN ReRAM devices. Stable switching properties with a large ON/OFF ratio of 102 are obtained from NKN ReRAM driven by NKN NG.

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Resistive Switching Memory Integrated with Nanogenerator for Self-Powered Bioimplantable Devices

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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