Resistive Switching Memory Integrated with Nanogenerator for Self-Powered Bioimplantable Devices

Bo Yun Kim, Woong Hee Lee, Hyun Gyu Hwang, Dong Ha Kim, Jeong Hun Kim, Sang Hoon Lee, Sahn Nahm

Research output: Contribution to journalArticlepeer-review

46 Citations (Scopus)


Resistive random access memory (ReRAM) devices powered by piezoelectric nanogenerators (NGs) have been investigated for their application to future implantable biomedical devices. Biocompatible (Na0.5K0.5)NbO3 (NKN) films that are grown at 300 °C on TiN/SiO2/Si and flexible TiN/Polyimide (TiN-PI) substrates are used for ReRAM and NGs, respectively. These NKN films have an amorphous phase containing NKN nanocrystals with a size of 5.0 nm. NKN ReRAM devices exhibit typical bipolar switching behavior that can be explained by the formation and rupture of oxygen-vacancy filaments. They have good ReRAM properties such as a large ratio of RHRS to RLRS as well as high reliability. The NKN film grown on flexible TiN-PI substrate exhibits a high piezoelectric strain constant of 50 pm V−1. The NKN NG has a large open-circuit output voltage of 2.0 V and a short-circuit output current of 40 nA, which are sufficient to drive NKN ReRAM devices. Stable switching properties with a large ON/OFF ratio of 102 are obtained from NKN ReRAM driven by NKN NG.

Original languageEnglish
Pages (from-to)5211-5221
Number of pages11
JournalAdvanced Functional Materials
Issue number29
Publication statusPublished - 2016 Aug 2

Bibliographical note

Publisher Copyright:
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim


  • NKN thin films
  • ReRAMs
  • implantable biomedical applications
  • nanogenerators
  • self-powered systems

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • General Chemistry
  • General Materials Science
  • Electrochemistry
  • Biomaterials


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