Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility

Seok Man Hong, Hee Dong Kim, Ho Myoung An, Tae Geun Kim

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


We report the resistive switching (RS) characteristics of tungsten nitride (WNx) thin films with excellent complementary metal-oxide- semiconductor (CMOS) compatibility. A Ti/WNx/Pt memory cell clearly shows bipolar RS behaviors at a low voltage of approximately ±2.2 V. The dominant conduction mechanisms at low and high resistance states were verified by Ohmic behavior and trap-controlled space-charge-limited conduction, respectively. A conducting filament model by a redox reaction explains the RS behavior in WNx films. We also demonstrate the memory characteristics during pulse operation, including a high endurance over >105 cycles and a long retention time of >105 s.

Original languageEnglish
Pages (from-to)5080-5083
Number of pages4
JournalMaterials Research Bulletin
Issue number12
Publication statusPublished - 2013

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (MEST) (No. 2011-0028769 , 2012-00109 ).


  • A. thin films
  • B. Sputtering
  • C. X-ray diffraction
  • D. Electrical properties

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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