Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility

Seok Man Hong; Hee Dong Kim; Ho Myoung An; Tae Geun Kim

doi:10.1016/j.materresbull.2013.05.073

Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility

Seok Man Hong
, Hee Dong Kim
, Ho Myoung An
, Tae Geun Kim^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We report the resistive switching (RS) characteristics of tungsten nitride (WN_x) thin films with excellent complementary metal-oxide- semiconductor (CMOS) compatibility. A Ti/WN_x/Pt memory cell clearly shows bipolar RS behaviors at a low voltage of approximately ±2.2 V. The dominant conduction mechanisms at low and high resistance states were verified by Ohmic behavior and trap-controlled space-charge-limited conduction, respectively. A conducting filament model by a redox reaction explains the RS behavior in WN_x films. We also demonstrate the memory characteristics during pulse operation, including a high endurance over >10⁵ cycles and a long retention time of >10⁵ s.

Original language	English
Pages (from-to)	5080-5083
Number of pages	4
Journal	Materials Research Bulletin
Volume	48
Issue number	12
DOIs	https://doi.org/10.1016/j.materresbull.2013.05.073
Publication status	Published - 2013

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (MEST) (No. 2011-0028769 , 2012-00109 ).

Keywords

A. thin films
B. Sputtering
C. X-ray diffraction
D. Electrical properties

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.materresbull.2013.05.073

Cite this

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title = "Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility",

abstract = "We report the resistive switching (RS) characteristics of tungsten nitride (WNx) thin films with excellent complementary metal-oxide- semiconductor (CMOS) compatibility. A Ti/WNx/Pt memory cell clearly shows bipolar RS behaviors at a low voltage of approximately ±2.2 V. The dominant conduction mechanisms at low and high resistance states were verified by Ohmic behavior and trap-controlled space-charge-limited conduction, respectively. A conducting filament model by a redox reaction explains the RS behavior in WNx films. We also demonstrate the memory characteristics during pulse operation, including a high endurance over >105 cycles and a long retention time of >105 s.",

keywords = "A. thin films, B. Sputtering, C. X-ray diffraction, D. Electrical properties",

author = "Hong, \{Seok Man\} and Kim, \{Hee Dong\} and An, \{Ho Myoung\} and Kim, \{Tae Geun\}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (MEST) (No. 2011-0028769 , 2012-00109 ).",

year = "2013",

doi = "10.1016/j.materresbull.2013.05.073",

language = "English",

volume = "48",

pages = "5080--5083",

journal = "Materials Research Bulletin",

issn = "0025-5408",

publisher = "Elsevier Ltd",

number = "12",

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TY - JOUR

T1 - Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility

AU - Hong, Seok Man

AU - Kim, Hee Dong

AU - An, Ho Myoung

AU - Kim, Tae Geun

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (MEST) (No. 2011-0028769 , 2012-00109 ).

PY - 2013

Y1 - 2013

N2 - We report the resistive switching (RS) characteristics of tungsten nitride (WNx) thin films with excellent complementary metal-oxide- semiconductor (CMOS) compatibility. A Ti/WNx/Pt memory cell clearly shows bipolar RS behaviors at a low voltage of approximately ±2.2 V. The dominant conduction mechanisms at low and high resistance states were verified by Ohmic behavior and trap-controlled space-charge-limited conduction, respectively. A conducting filament model by a redox reaction explains the RS behavior in WNx films. We also demonstrate the memory characteristics during pulse operation, including a high endurance over >105 cycles and a long retention time of >105 s.

AB - We report the resistive switching (RS) characteristics of tungsten nitride (WNx) thin films with excellent complementary metal-oxide- semiconductor (CMOS) compatibility. A Ti/WNx/Pt memory cell clearly shows bipolar RS behaviors at a low voltage of approximately ±2.2 V. The dominant conduction mechanisms at low and high resistance states were verified by Ohmic behavior and trap-controlled space-charge-limited conduction, respectively. A conducting filament model by a redox reaction explains the RS behavior in WNx films. We also demonstrate the memory characteristics during pulse operation, including a high endurance over >105 cycles and a long retention time of >105 s.

KW - A. thin films

KW - B. Sputtering

KW - C. X-ray diffraction

KW - D. Electrical properties

UR - https://www.scopus.com/pages/publications/84885950798

U2 - 10.1016/j.materresbull.2013.05.073

DO - 10.1016/j.materresbull.2013.05.073

M3 - Article

AN - SCOPUS:84885950798

SN - 0025-5408

VL - 48

SP - 5080

EP - 5083

JO - Materials Research Bulletin

JF - Materials Research Bulletin

IS - 12

ER -

Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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