Resistive switching properties of amorphous Pr 0.7Ca 0.3MnO 3 films grown on indium tin oxide/glass substrate using pulsed laser deposition method

Tae Geun Seong, Kyu Bum Choi, In Tae Seo, Joon Ho Oh, Ji Won Moon, Kwon Hong, Sahn Nahm

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

Amorphous Pr 0.7Ca 0.3MnO 3 (APCMO) films, which were grown on indium tin oxide (ITO)/glass at room temperature (RT), were n-type materials. The APCMO/ITO/glass device exhibited an average transparency of 77 in the visible range with a maximum transparency of 84 at a wavelength of 530 nm. The Pt/APCMO/ITO device showed stable bipolar resistive switching behavior over 200 cycles that did not degrade after 10 5s at RT. The resistance of the APCMO film decreased in both low- and high-resistance states with increasing device area. The resistive switching behavior of the Pt/APCMO/ITO device can be explained by the trap-charged space-charge-limited current mechanism.

Original languageEnglish
Article number212111
JournalApplied Physics Letters
Volume100
Issue number21
DOIs
Publication statusPublished - 2012 May 21

Bibliographical note

Funding Information:
This research was supported by a Grant from Next Generation Memory New Technology funded by Hynix Semiconductor Inc.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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