Amorphous Pr 0.7Ca 0.3MnO 3 (APCMO) films, which were grown on indium tin oxide (ITO)/glass at room temperature (RT), were n-type materials. The APCMO/ITO/glass device exhibited an average transparency of 77 in the visible range with a maximum transparency of 84 at a wavelength of 530 nm. The Pt/APCMO/ITO device showed stable bipolar resistive switching behavior over 200 cycles that did not degrade after 10 5s at RT. The resistance of the APCMO film decreased in both low- and high-resistance states with increasing device area. The resistive switching behavior of the Pt/APCMO/ITO device can be explained by the trap-charged space-charge-limited current mechanism.
Bibliographical noteFunding Information:
This research was supported by a Grant from Next Generation Memory New Technology funded by Hynix Semiconductor Inc.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)