Resistive switching properties of amorphous Pr 0.7Ca 0.3MnO 3 films grown on indium tin oxide/glass substrate using pulsed laser deposition method

Tae Geun Seong; Kyu Bum Choi; In Tae Seo; Joon Ho Oh; Ji Won Moon; Kwon Hong; Sahn Nahm

doi:10.1063/1.4722797

Resistive switching properties of amorphous Pr _0.7Ca _0.3MnO ₃ films grown on indium tin oxide/glass substrate using pulsed laser deposition method

Tae Geun Seong, Kyu Bum Choi, In Tae Seo, Joon Ho Oh, Ji Won Moon, Kwon Hong, Sahn Nahm

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Amorphous Pr _0.7Ca _0.3MnO ₃ (APCMO) films, which were grown on indium tin oxide (ITO)/glass at room temperature (RT), were n-type materials. The APCMO/ITO/glass device exhibited an average transparency of 77 in the visible range with a maximum transparency of 84 at a wavelength of 530 nm. The Pt/APCMO/ITO device showed stable bipolar resistive switching behavior over 200 cycles that did not degrade after 10 ⁵s at RT. The resistance of the APCMO film decreased in both low- and high-resistance states with increasing device area. The resistive switching behavior of the Pt/APCMO/ITO device can be explained by the trap-charged space-charge-limited current mechanism.

Original language	English
Article number	212111
Journal	Applied Physics Letters
Volume	100
Issue number	21
DOIs	https://doi.org/10.1063/1.4722797
Publication status	Published - 2012 May 21

Bibliographical note

Funding Information:
This research was supported by a Grant from Next Generation Memory New Technology funded by Hynix Semiconductor Inc.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4722797

Cite this

@article{53be1513f85c4ea593d4e54af793f7e6,

title = "Resistive switching properties of amorphous Pr 0.7Ca 0.3MnO 3 films grown on indium tin oxide/glass substrate using pulsed laser deposition method",

abstract = "Amorphous Pr 0.7Ca 0.3MnO 3 (APCMO) films, which were grown on indium tin oxide (ITO)/glass at room temperature (RT), were n-type materials. The APCMO/ITO/glass device exhibited an average transparency of 77 in the visible range with a maximum transparency of 84 at a wavelength of 530 nm. The Pt/APCMO/ITO device showed stable bipolar resistive switching behavior over 200 cycles that did not degrade after 10 5s at RT. The resistance of the APCMO film decreased in both low- and high-resistance states with increasing device area. The resistive switching behavior of the Pt/APCMO/ITO device can be explained by the trap-charged space-charge-limited current mechanism.",

author = "Seong, {Tae Geun} and {Bum Choi}, Kyu and Seo, {In Tae} and Oh, {Joon Ho} and {Won Moon}, Ji and Kwon Hong and Sahn Nahm",

note = "Funding Information: This research was supported by a Grant from Next Generation Memory New Technology funded by Hynix Semiconductor Inc.",

year = "2012",

month = may,

day = "21",

doi = "10.1063/1.4722797",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

}

TY - JOUR

T1 - Resistive switching properties of amorphous Pr 0.7Ca 0.3MnO 3 films grown on indium tin oxide/glass substrate using pulsed laser deposition method

AU - Seong, Tae Geun

AU - Bum Choi, Kyu

AU - Seo, In Tae

AU - Oh, Joon Ho

AU - Won Moon, Ji

AU - Hong, Kwon

AU - Nahm, Sahn

N1 - Funding Information: This research was supported by a Grant from Next Generation Memory New Technology funded by Hynix Semiconductor Inc.

PY - 2012/5/21

Y1 - 2012/5/21

N2 - Amorphous Pr 0.7Ca 0.3MnO 3 (APCMO) films, which were grown on indium tin oxide (ITO)/glass at room temperature (RT), were n-type materials. The APCMO/ITO/glass device exhibited an average transparency of 77 in the visible range with a maximum transparency of 84 at a wavelength of 530 nm. The Pt/APCMO/ITO device showed stable bipolar resistive switching behavior over 200 cycles that did not degrade after 10 5s at RT. The resistance of the APCMO film decreased in both low- and high-resistance states with increasing device area. The resistive switching behavior of the Pt/APCMO/ITO device can be explained by the trap-charged space-charge-limited current mechanism.

AB - Amorphous Pr 0.7Ca 0.3MnO 3 (APCMO) films, which were grown on indium tin oxide (ITO)/glass at room temperature (RT), were n-type materials. The APCMO/ITO/glass device exhibited an average transparency of 77 in the visible range with a maximum transparency of 84 at a wavelength of 530 nm. The Pt/APCMO/ITO device showed stable bipolar resistive switching behavior over 200 cycles that did not degrade after 10 5s at RT. The resistance of the APCMO film decreased in both low- and high-resistance states with increasing device area. The resistive switching behavior of the Pt/APCMO/ITO device can be explained by the trap-charged space-charge-limited current mechanism.

UR - http://www.scopus.com/inward/record.url?scp=84861809829&partnerID=8YFLogxK

U2 - 10.1063/1.4722797

DO - 10.1063/1.4722797

M3 - Article

AN - SCOPUS:84861809829

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 212111

ER -