Resistive switching properties of amorphous Pr 0.7Ca 0.3MnO 3 films grown on indium tin oxide/glass substrate using pulsed laser deposition method

Tae Geun Seong; Kyu Bum Choi; In Tae Seo; Joon Ho Oh; Ji Won Moon; Kwon Hong; Sahn Nahm

doi:10.1063/1.4722797

Resistive switching properties of amorphous Pr _0.7Ca _0.3MnO ₃ films grown on indium tin oxide/glass substrate using pulsed laser deposition method

Tae Geun Seong, Kyu Bum Choi, In Tae Seo, Joon Ho Oh, Ji Won Moon, Kwon Hong, Sahn Nahm

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Amorphous Pr _0.7Ca _0.3MnO ₃ (APCMO) films, which were grown on indium tin oxide (ITO)/glass at room temperature (RT), were n-type materials. The APCMO/ITO/glass device exhibited an average transparency of 77 in the visible range with a maximum transparency of 84 at a wavelength of 530 nm. The Pt/APCMO/ITO device showed stable bipolar resistive switching behavior over 200 cycles that did not degrade after 10 ⁵s at RT. The resistance of the APCMO film decreased in both low- and high-resistance states with increasing device area. The resistive switching behavior of the Pt/APCMO/ITO device can be explained by the trap-charged space-charge-limited current mechanism.

Original language	English
Article number	212111
Journal	Applied Physics Letters
Volume	100
Issue number	21
DOIs	https://doi.org/10.1063/1.4722797
Publication status	Published - 2012 May 21

Bibliographical note

Funding Information:
This research was supported by a Grant from Next Generation Memory New Technology funded by Hynix Semiconductor Inc.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4722797

Cite this

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title = "Resistive switching properties of amorphous Pr 0.7Ca 0.3MnO 3 films grown on indium tin oxide/glass substrate using pulsed laser deposition method",

abstract = "Amorphous Pr 0.7Ca 0.3MnO 3 (APCMO) films, which were grown on indium tin oxide (ITO)/glass at room temperature (RT), were n-type materials. The APCMO/ITO/glass device exhibited an average transparency of 77 in the visible range with a maximum transparency of 84 at a wavelength of 530 nm. The Pt/APCMO/ITO device showed stable bipolar resistive switching behavior over 200 cycles that did not degrade after 10 5s at RT. The resistance of the APCMO film decreased in both low- and high-resistance states with increasing device area. The resistive switching behavior of the Pt/APCMO/ITO device can be explained by the trap-charged space-charge-limited current mechanism.",

author = "Seong, {Tae Geun} and {Bum Choi}, Kyu and Seo, {In Tae} and Oh, {Joon Ho} and {Won Moon}, Ji and Kwon Hong and Sahn Nahm",

note = "Funding Information: This research was supported by a Grant from Next Generation Memory New Technology funded by Hynix Semiconductor Inc.",

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T1 - Resistive switching properties of amorphous Pr 0.7Ca 0.3MnO 3 films grown on indium tin oxide/glass substrate using pulsed laser deposition method

AU - Seong, Tae Geun

AU - Bum Choi, Kyu

AU - Seo, In Tae

AU - Oh, Joon Ho

AU - Won Moon, Ji

AU - Hong, Kwon

AU - Nahm, Sahn

N1 - Funding Information: This research was supported by a Grant from Next Generation Memory New Technology funded by Hynix Semiconductor Inc.

PY - 2012/5/21

Y1 - 2012/5/21

N2 - Amorphous Pr 0.7Ca 0.3MnO 3 (APCMO) films, which were grown on indium tin oxide (ITO)/glass at room temperature (RT), were n-type materials. The APCMO/ITO/glass device exhibited an average transparency of 77 in the visible range with a maximum transparency of 84 at a wavelength of 530 nm. The Pt/APCMO/ITO device showed stable bipolar resistive switching behavior over 200 cycles that did not degrade after 10 5s at RT. The resistance of the APCMO film decreased in both low- and high-resistance states with increasing device area. The resistive switching behavior of the Pt/APCMO/ITO device can be explained by the trap-charged space-charge-limited current mechanism.

AB - Amorphous Pr 0.7Ca 0.3MnO 3 (APCMO) films, which were grown on indium tin oxide (ITO)/glass at room temperature (RT), were n-type materials. The APCMO/ITO/glass device exhibited an average transparency of 77 in the visible range with a maximum transparency of 84 at a wavelength of 530 nm. The Pt/APCMO/ITO device showed stable bipolar resistive switching behavior over 200 cycles that did not degrade after 10 5s at RT. The resistance of the APCMO film decreased in both low- and high-resistance states with increasing device area. The resistive switching behavior of the Pt/APCMO/ITO device can be explained by the trap-charged space-charge-limited current mechanism.

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