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Resistive switching properties of amorphous Pr
0.7
Ca
0.3
MnO
3
films grown on indium tin oxide/glass substrate using pulsed laser deposition method
Tae Geun Seong
, Kyu Bum Choi
, In Tae Seo
, Joon Ho Oh
, Ji Won Moon
, Kwon Hong
,
Sahn Nahm
*
*
Corresponding author for this work
Research output
:
Contribution to journal
›
Article
›
peer-review
17
Citations (Scopus)
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Dive into the research topics of 'Resistive switching properties of amorphous Pr
0.7
Ca
0.3
MnO
3
films grown on indium tin oxide/glass substrate using pulsed laser deposition method'. Together they form a unique fingerprint.
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Keyphrases
Pulsed Laser Deposition
100%
Glass Substrate
100%
Resistive Switching Properties
100%
Indium Tin Oxide Glass
100%
Room Temperature
66%
Indium Tin Oxide
66%
Visible Spectrum
33%
Low Resistance
33%
Resistance Resistance
33%
Resistive Switching
33%
Current Mechanism
33%
High Resistance State
33%
Device Area
33%
Space Charge Limited Current
33%
Bipolar Resistive Switching
33%
Glass Device
33%
Engineering
Resistive
100%
Indium-Tin-Oxide
100%
Deposition Method
100%
Pulsed Laser
100%
Glass Substrate
100%
Room Temperature
40%
Space Charge
20%
High Resistance State
20%
Material Science
Film
100%
Pulsed Laser Deposition
100%
ITO Glass
100%
Indium Tin Oxide
66%
Materials Class
33%