Resonance-tunneling-assisted emission enhancement in green light-emitting diodes with nanocraters formed in InGaNGaN quantum-well active layers

Jae Ho Song; G. Hugh Song; Jhang W. Lee; Young Woo Ok; Tae Yeon Seong; Oleg Laboutin; Paul Deluca; H. K. Choi

doi:10.1063/1.1890475

Resonance-tunneling-assisted emission enhancement in green light-emitting diodes with nanocraters formed in InGaNGaN quantum-well active layers

Jae Ho Song, G. Hugh Song, Jhang W. Lee, Young Woo Ok, Tae Yeon Seong, Oleg Laboutin, Paul Deluca, H. K. Choi

Research output: Contribution to journal › Article › peer-review

Abstract

Data are presented on the resonant tunneling-related abrupt redshift observed in the temperature-dependent electroluminescence spectra of high-brightness InGaNGaN multi-quantum-well green light-emitting diodes (LEDs). It is found that the redshift arises mostly between 120 and 150 K, and brighter LEDs yield larger redshifts. These results are well explained by the proposed nanocrater model which comprises a Ga-rich quantum barrier surrounding the In-rich quantum-dot-like localized state. Intensity analysis manifests that the resonant tunneling from the quantum-well to the nanocrater-shaped localized states induces such an abrupt energy shift and enhances the room-temperature emission.

Original language	English
Article number	132102
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	13
DOIs	https://doi.org/10.1063/1.1890475
Publication status	Published - 2005 Mar 28
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1890475

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title = "Resonance-tunneling-assisted emission enhancement in green light-emitting diodes with nanocraters formed in InGaNGaN quantum-well active layers",

abstract = "Data are presented on the resonant tunneling-related abrupt redshift observed in the temperature-dependent electroluminescence spectra of high-brightness InGaNGaN multi-quantum-well green light-emitting diodes (LEDs). It is found that the redshift arises mostly between 120 and 150 K, and brighter LEDs yield larger redshifts. These results are well explained by the proposed nanocrater model which comprises a Ga-rich quantum barrier surrounding the In-rich quantum-dot-like localized state. Intensity analysis manifests that the resonant tunneling from the quantum-well to the nanocrater-shaped localized states induces such an abrupt energy shift and enhances the room-temperature emission.",

author = "Song, {Jae Ho} and Song, {G. Hugh} and Lee, {Jhang W.} and Ok, {Young Woo} and Seong, {Tae Yeon} and Oleg Laboutin and Paul Deluca and Choi, {H. K.}",

note = "Funding Information: This work was supported in part through the BK-21 IT Program by MOE, Korea, the KOSEF through the UFON ERC program at Gwangju Institute of Science and Technology in Korea, and Kowon Technology Ltd. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2005",

month = mar,

day = "28",

doi = "10.1063/1.1890475",

language = "English",

volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Resonance-tunneling-assisted emission enhancement in green light-emitting diodes with nanocraters formed in InGaNGaN quantum-well active layers

AU - Song, Jae Ho

AU - Song, G. Hugh

AU - Lee, Jhang W.

AU - Ok, Young Woo

AU - Seong, Tae Yeon

AU - Laboutin, Oleg

AU - Deluca, Paul

AU - Choi, H. K.

N1 - Funding Information: This work was supported in part through the BK-21 IT Program by MOE, Korea, the KOSEF through the UFON ERC program at Gwangju Institute of Science and Technology in Korea, and Kowon Technology Ltd. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2005/3/28

Y1 - 2005/3/28

N2 - Data are presented on the resonant tunneling-related abrupt redshift observed in the temperature-dependent electroluminescence spectra of high-brightness InGaNGaN multi-quantum-well green light-emitting diodes (LEDs). It is found that the redshift arises mostly between 120 and 150 K, and brighter LEDs yield larger redshifts. These results are well explained by the proposed nanocrater model which comprises a Ga-rich quantum barrier surrounding the In-rich quantum-dot-like localized state. Intensity analysis manifests that the resonant tunneling from the quantum-well to the nanocrater-shaped localized states induces such an abrupt energy shift and enhances the room-temperature emission.

AB - Data are presented on the resonant tunneling-related abrupt redshift observed in the temperature-dependent electroluminescence spectra of high-brightness InGaNGaN multi-quantum-well green light-emitting diodes (LEDs). It is found that the redshift arises mostly between 120 and 150 K, and brighter LEDs yield larger redshifts. These results are well explained by the proposed nanocrater model which comprises a Ga-rich quantum barrier surrounding the In-rich quantum-dot-like localized state. Intensity analysis manifests that the resonant tunneling from the quantum-well to the nanocrater-shaped localized states induces such an abrupt energy shift and enhances the room-temperature emission.

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ER -

Resonance-tunneling-assisted emission enhancement in green light-emitting diodes with nanocraters formed in InGaNGaN quantum-well active layers

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