Reverse active mode current characteristics of SiGe HBTs

Jae Sung Rieh; Jin Cai; Tak Ning; Andreas Stricker; Greg Freeman

doi:10.1109/TED.2005.848869

Reverse active mode current characteristics of SiGe HBTs

Jae Sung Rieh, Jin Cai, Tak Ning, Andreas Stricker, Greg Freeman

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The current characteristics of SiGe heterojunction bipolar transistors (HBTs) operating in the reverse active mode are investigated. It is experimentally shown that the I_C is identical for the reverse and the forward modes for arbitrary doping and Ge profiles across the base to first order. In contrast, the impact of V_BE and V_CB modulation on I_C is opposite for the two modes, leading to a smaller Early voltage but more ideal collector current for the reverse mode.

Original language	English
Pages (from-to)	1219-1222
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	52
Issue number	6
DOIs	https://doi.org/10.1109/TED.2005.848869
Publication status	Published - 2005 Jun

Keywords

Current
Heterojunction bipolar transistors (HBTs)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2005.848869

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@article{325c42ef1f3b486dad086ff8e1b364f3,

title = "Reverse active mode current characteristics of SiGe HBTs",

abstract = "The current characteristics of SiGe heterojunction bipolar transistors (HBTs) operating in the reverse active mode are investigated. It is experimentally shown that the IC is identical for the reverse and the forward modes for arbitrary doping and Ge profiles across the base to first order. In contrast, the impact of VBE and VCB modulation on IC is opposite for the two modes, leading to a smaller Early voltage but more ideal collector current for the reverse mode.",

keywords = "Current, Heterojunction bipolar transistors (HBTs)",

author = "Rieh, {Jae Sung} and Jin Cai and Tak Ning and Andreas Stricker and Greg Freeman",

year = "2005",

month = jun,

doi = "10.1109/TED.2005.848869",

language = "English",

volume = "52",

pages = "1219--1222",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Reverse active mode current characteristics of SiGe HBTs

AU - Rieh, Jae Sung

AU - Cai, Jin

AU - Ning, Tak

AU - Stricker, Andreas

AU - Freeman, Greg

PY - 2005/6

Y1 - 2005/6

N2 - The current characteristics of SiGe heterojunction bipolar transistors (HBTs) operating in the reverse active mode are investigated. It is experimentally shown that the IC is identical for the reverse and the forward modes for arbitrary doping and Ge profiles across the base to first order. In contrast, the impact of VBE and VCB modulation on IC is opposite for the two modes, leading to a smaller Early voltage but more ideal collector current for the reverse mode.

AB - The current characteristics of SiGe heterojunction bipolar transistors (HBTs) operating in the reverse active mode are investigated. It is experimentally shown that the IC is identical for the reverse and the forward modes for arbitrary doping and Ge profiles across the base to first order. In contrast, the impact of VBE and VCB modulation on IC is opposite for the two modes, leading to a smaller Early voltage but more ideal collector current for the reverse mode.

KW - Current

KW - Heterojunction bipolar transistors (HBTs)

UR - http://www.scopus.com/inward/record.url?scp=21044446403&partnerID=8YFLogxK

U2 - 10.1109/TED.2005.848869

DO - 10.1109/TED.2005.848869

M3 - Article

AN - SCOPUS:21044446403

SN - 0018-9383

VL - 52

SP - 1219

EP - 1222

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

ER -

Reverse active mode current characteristics of SiGe HBTs

Abstract

Keywords

ASJC Scopus subject areas

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