Reverse active mode current characteristics of SiGe HBTs

Jae Sung Rieh, Jin Cai, Tak Ning, Andreas Stricker, Greg Freeman

    Research output: Contribution to journalArticlepeer-review

    14 Citations (Scopus)

    Abstract

    The current characteristics of SiGe heterojunction bipolar transistors (HBTs) operating in the reverse active mode are investigated. It is experimentally shown that the IC is identical for the reverse and the forward modes for arbitrary doping and Ge profiles across the base to first order. In contrast, the impact of VBE and VCB modulation on IC is opposite for the two modes, leading to a smaller Early voltage but more ideal collector current for the reverse mode.

    Original languageEnglish
    Pages (from-to)1219-1222
    Number of pages4
    JournalIEEE Transactions on Electron Devices
    Volume52
    Issue number6
    DOIs
    Publication statusPublished - 2005 Jun

    Keywords

    • Current
    • Heterojunction bipolar transistors (HBTs)

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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