Reverse active mode current characteristics of SiGe HBTs

Jae Sung Rieh; Jin Cai; Tak Ning; Andreas Stricker; Greg Freeman

doi:10.1109/TED.2005.848869

Reverse active mode current characteristics of SiGe HBTs

Jae Sung Rieh, Jin Cai, Tak Ning, Andreas Stricker, Greg Freeman

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The current characteristics of SiGe heterojunction bipolar transistors (HBTs) operating in the reverse active mode are investigated. It is experimentally shown that the I_C is identical for the reverse and the forward modes for arbitrary doping and Ge profiles across the base to first order. In contrast, the impact of V_BE and V_CB modulation on I_C is opposite for the two modes, leading to a smaller Early voltage but more ideal collector current for the reverse mode.

Original language	English
Pages (from-to)	1219-1222
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	52
Issue number	6
DOIs	https://doi.org/10.1109/TED.2005.848869
Publication status	Published - 2005 Jun

Keywords

Current
Heterojunction bipolar transistors (HBTs)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2005.848869

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abstract = "The current characteristics of SiGe heterojunction bipolar transistors (HBTs) operating in the reverse active mode are investigated. It is experimentally shown that the IC is identical for the reverse and the forward modes for arbitrary doping and Ge profiles across the base to first order. In contrast, the impact of VBE and VCB modulation on IC is opposite for the two modes, leading to a smaller Early voltage but more ideal collector current for the reverse mode.",

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AU - Rieh, Jae Sung

AU - Cai, Jin

AU - Ning, Tak

AU - Stricker, Andreas

AU - Freeman, Greg

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Y1 - 2005/6

N2 - The current characteristics of SiGe heterojunction bipolar transistors (HBTs) operating in the reverse active mode are investigated. It is experimentally shown that the IC is identical for the reverse and the forward modes for arbitrary doping and Ge profiles across the base to first order. In contrast, the impact of VBE and VCB modulation on IC is opposite for the two modes, leading to a smaller Early voltage but more ideal collector current for the reverse mode.

AB - The current characteristics of SiGe heterojunction bipolar transistors (HBTs) operating in the reverse active mode are investigated. It is experimentally shown that the IC is identical for the reverse and the forward modes for arbitrary doping and Ge profiles across the base to first order. In contrast, the impact of VBE and VCB modulation on IC is opposite for the two modes, leading to a smaller Early voltage but more ideal collector current for the reverse mode.

KW - Current

KW - Heterojunction bipolar transistors (HBTs)

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Reverse active mode current characteristics of SiGe HBTs

Abstract

Keywords

ASJC Scopus subject areas

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