Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices

Tae Wook Kim, Seung Hwan Oh, Hyejung Choi, Gunuk Wang, Hyunsang Hwang, Dong Yu Kim, Takhee Lee

Research output: Contribution to journalArticlepeer-review

71 Citations (Scopus)

Abstract

This letter reports on reversible switching behavior of metal-insulator-metal type nonvolatile organic memory devices using polyfluorene-derivative (WPF-oxy-F) single layer film. The current-voltage (I-V) characteristics showed that the WPF-oxy-F single layer film has two distinguished resistance states, low resistance state and high resistance state, with four orders of on/off ratio (Ion Ioff ∼ 104). From the analysis of I-V curves, area dependent I-V characteristics, and current images obtained by conducting atomic force microscopy we propose that the space charge limited current with filamentary conduction is a potential mechanism for the reversible switching behavior of WPF-Oxy-F memory devices.

Original languageEnglish
Article number253308
JournalApplied Physics Letters
Volume92
Issue number25
DOIs
Publication statusPublished - 2008
Externally publishedYes

Bibliographical note

Funding Information:
This work was supported by the National Research Laboratory (NRL) Programs of the Korea Science and Engineering Foundation (KOSEF), the Program for Integrated Molecular System at GIST, and SystemIC2010 project of Korea Ministry of Knowledge Economy.

Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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