RF sputtered BZN pyrochlore thin films for voltage tunable dielectric device applications

Young Pyo Hong; Seok Ha; Ha Yong Lee; Young Cheol Lee; Kyung Hyun Ko; Dong Wan Kim; Hee Bum Hong; Kug Sun Hong

doi:10.1557/proc-720-h3.5

RF sputtered BZN pyrochlore thin films for voltage tunable dielectric device applications

Young Pyo Hong, Seok Ha, Ha Yong Lee, Young Cheol Lee, Kyung Hyun Ko, Dong Wan Kim, Hee Bum Hong, Kug Sun Hong

Research output: Contribution to journal › Conference article › peer-review

Abstract

The BZN pyrochlore thin films were prepared on platinized Si substrates using a reactive RF magnetron sputtering. The structures, surface morphologies, dielectric properties and voltage tunable properties of films with deposition parameters were investigated. The BZN thin films have a cubic pyrochlore phase and secondary phases of zinc niobate, bismuth niobate when crystallized at 600 °C ∼ 800 °C. The dielectric constant and tunability of thin films are O₂/Ar ratio and post-annealing temperature dependent. The BZN thin films sputtered in 15% O₂ and annealed at 700 °C had a dielectric constant of 153, tan δ of ∼0.003 and maximum tunability of 14% at 1,000kV/cm.

Original language	English
Pages (from-to)	73-78
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	720
DOIs	https://doi.org/10.1557/proc-720-h3.5
Publication status	Published - 2002
Externally published	Yes
Event	Materials Issues for Tunable RF and Microwave Devices III - San Francisco, CA, United States Duration: 2002 Apr 2 → 2002 Apr 3

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-720-h3.5

Cite this

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title = "RF sputtered BZN pyrochlore thin films for voltage tunable dielectric device applications",

abstract = "The BZN pyrochlore thin films were prepared on platinized Si substrates using a reactive RF magnetron sputtering. The structures, surface morphologies, dielectric properties and voltage tunable properties of films with deposition parameters were investigated. The BZN thin films have a cubic pyrochlore phase and secondary phases of zinc niobate, bismuth niobate when crystallized at 600 °C ∼ 800 °C. The dielectric constant and tunability of thin films are O2/Ar ratio and post-annealing temperature dependent. The BZN thin films sputtered in 15% O2 and annealed at 700 °C had a dielectric constant of 153, tan δ of ∼0.003 and maximum tunability of 14% at 1,000kV/cm.",

author = "Hong, {Young Pyo} and Seok Ha and Lee, {Ha Yong} and Lee, {Young Cheol} and Ko, {Kyung Hyun} and Kim, {Dong Wan} and Hong, {Hee Bum} and Hong, {Kug Sun}",

year = "2002",

doi = "10.1557/proc-720-h3.5",

language = "English",

volume = "720",

pages = "73--78",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Materials Issues for Tunable RF and Microwave Devices III ; Conference date: 02-04-2002 Through 03-04-2002",

}

TY - JOUR

T1 - RF sputtered BZN pyrochlore thin films for voltage tunable dielectric device applications

AU - Hong, Young Pyo

AU - Ha, Seok

AU - Lee, Ha Yong

AU - Lee, Young Cheol

AU - Ko, Kyung Hyun

AU - Kim, Dong Wan

AU - Hong, Hee Bum

AU - Hong, Kug Sun

PY - 2002

Y1 - 2002

N2 - The BZN pyrochlore thin films were prepared on platinized Si substrates using a reactive RF magnetron sputtering. The structures, surface morphologies, dielectric properties and voltage tunable properties of films with deposition parameters were investigated. The BZN thin films have a cubic pyrochlore phase and secondary phases of zinc niobate, bismuth niobate when crystallized at 600 °C ∼ 800 °C. The dielectric constant and tunability of thin films are O2/Ar ratio and post-annealing temperature dependent. The BZN thin films sputtered in 15% O2 and annealed at 700 °C had a dielectric constant of 153, tan δ of ∼0.003 and maximum tunability of 14% at 1,000kV/cm.

AB - The BZN pyrochlore thin films were prepared on platinized Si substrates using a reactive RF magnetron sputtering. The structures, surface morphologies, dielectric properties and voltage tunable properties of films with deposition parameters were investigated. The BZN thin films have a cubic pyrochlore phase and secondary phases of zinc niobate, bismuth niobate when crystallized at 600 °C ∼ 800 °C. The dielectric constant and tunability of thin films are O2/Ar ratio and post-annealing temperature dependent. The BZN thin films sputtered in 15% O2 and annealed at 700 °C had a dielectric constant of 153, tan δ of ∼0.003 and maximum tunability of 14% at 1,000kV/cm.

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U2 - 10.1557/proc-720-h3.5

DO - 10.1557/proc-720-h3.5

M3 - Conference article

AN - SCOPUS:0036458370

SN - 0272-9172

VL - 720

SP - 73

EP - 78

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Materials Issues for Tunable RF and Microwave Devices III

Y2 - 2 April 2002 through 3 April 2002

ER -

RF sputtered BZN pyrochlore thin films for voltage tunable dielectric device applications

Abstract

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