Rhenium Diselenide (ReSe2) Near-Infrared Photodetector: Performance Enhancement by Selective p-Doping Technique

Jinok Kim, Keun Heo, Dong Ho Kang, Changhwan Shin, Sungjoo Lee, Hyun Yong Yu, Jin Hong Park

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)


In this study, a near-infrared photodetector featuring a high photoresponsivity and a short photoresponse time is demonstrated, which is fabricated on rhenium diselenide (ReSe2) with a relatively narrow bandgap (0.9–1.0 eV) compared to conventional transition-metal dichalcogenides (TMDs). The excellent photo and temporal responses, which generally show a trade-off relation, are achieved simultaneously by applying a p-doping technique based on hydrochloric acid (HCl) to a selected ReSe2 region. Because the p-doping of ReSe2 originates from the charge transfer from un-ionized Cl molecules in the HCl to the ReSe2 surface, by adjusting the concentration of the HCl solution from 0.1 to 10 m, the doping concentration of the ReSe2 is controlled between 3.64 × 1010 and 3.61 × 1011 cm−2. Especially, the application of the selective HCl doping technique to the ReSe2 photodetector increases the photoresponsivity from 79.99 to 1.93 × 103 A W−1, and it also enhances the rise and decay times from 10.5 to 1.4 ms and from 291 to 3.1 ms, respectively, compared with the undoped ReSe2 device. The proposed selective p-doping technique and its fundamental analysis will provide a scientific foundation for implementing high-performance TMD-based electronic and optoelectronic devices.

Original languageEnglish
Article number1901255
JournalAdvanced Science
Issue number21
Publication statusPublished - 2019 Nov 1

Bibliographical note

Funding Information:
J.K., K.H., and D.-H.K. contributed equally to this work. This research was supported by the Basic Science Research Program, the Basic Research Lab Program, and the Nano-Material Technology Development Program through the National Research Foundation of Korea (NRF) grants funded by the Korea government (MSIP) (2018R1A2A2A05020475, 2017R1A4A1015400, and 2016M3A7B4910426), the Future Semiconductor Device Technology Development Program (10067739) funded by the Ministry of Trade, Industry and Energy (MOTIE), and the Korea Semiconductor Research Consortium (KSRC). This work was also supported by the Samsung-SKKU Strategic Industrial-Educational Program of Samsung Electronics.

Publisher Copyright:
© 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim


  • HCl doping
  • ReSe
  • p-doping
  • photodetector
  • selective doping
  • transistor
  • transition-metal dichalcogenides (TMDs)

ASJC Scopus subject areas

  • Medicine (miscellaneous)
  • General Chemical Engineering
  • General Materials Science
  • Biochemistry, Genetics and Molecular Biology (miscellaneous)
  • General Engineering
  • General Physics and Astronomy


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