Role of alumina buffer layer on the dielectric and piezoelectric properties of PZT system thick films

Tae Hee Shin; Jong Yoon Ha; Hyun Cheol Song; Seok Jin Yoon; Seong Ju Hwang; Sahn Nahm; Hyung Ho Park; Ji Won Choi

doi:10.1111/jace.12052

Role of alumina buffer layer on the dielectric and piezoelectric properties of PZT system thick films

Tae Hee Shin, Jong Yoon Ha, Hyun Cheol Song, Seok Jin Yoon, Seong Ju Hwang, Sahn Nahm, Hyung Ho Park, Ji Won Choi

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Piezoelectric properties of screen-printed thick films, 0.01Pb(Mg _1/2W_1/2)O₃-0.41Pb(Ni_1/3Nb _2/3)O₃-0.35PbTiO₃-0.23PbZrO₃ + 0.1 wt% Y₂O₃ + 1.5 wt% ZnO (PMW-PNN-PT-PZ+YZ) on alumina (Al₂O₃) buffer layers deposited on Si substrates, were studied. To improve piezoelectric properties of and integrate the PMW-PNN-PT-PZ+YZ thick films, the Al₂O₃ buffer layers on silicon (Si) substrates were used. The Al₂O₃ buffer layer on the Si substrate suppressed the pyrochlore phases of the piezoelectric thick films and prevented interdiffusion of Si and Pb. The PMW-PNN-PT-PZ+YZ thick films with 900 nm thick Al₂O₃ buffer layer showed piezoelectric properties such as P_r = 32 μC/cm², E _c = 25 kV/cm, and d₃₃ = 32 pC/N. These significant piezoelectric properties of our screen-printed PMW-PNN-PT-PZ+YZ thick films by the Al₂O₃ buffer layers can be applied to functional thick film in many micro-electromechanical system (MEMS) applications such as micro actuators and sensors.

Original language	English
Pages (from-to)	491-495
Number of pages	5
Journal	Journal of the American Ceramic Society
Volume	96
Issue number	2
DOIs	https://doi.org/10.1111/jace.12052
Publication status	Published - 2013 Feb

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

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@article{d019ab83bdce448b9edd3defb87d1fae,

title = "Role of alumina buffer layer on the dielectric and piezoelectric properties of PZT system thick films",

abstract = "Piezoelectric properties of screen-printed thick films, 0.01Pb(Mg 1/2W1/2)O3-0.41Pb(Ni1/3Nb 2/3)O3-0.35PbTiO3-0.23PbZrO3 + 0.1 wt% Y2O3 + 1.5 wt% ZnO (PMW-PNN-PT-PZ+YZ) on alumina (Al2O3) buffer layers deposited on Si substrates, were studied. To improve piezoelectric properties of and integrate the PMW-PNN-PT-PZ+YZ thick films, the Al2O3 buffer layers on silicon (Si) substrates were used. The Al2O3 buffer layer on the Si substrate suppressed the pyrochlore phases of the piezoelectric thick films and prevented interdiffusion of Si and Pb. The PMW-PNN-PT-PZ+YZ thick films with 900 nm thick Al2O3 buffer layer showed piezoelectric properties such as Pr = 32 μC/cm2, E c = 25 kV/cm, and d33 = 32 pC/N. These significant piezoelectric properties of our screen-printed PMW-PNN-PT-PZ+YZ thick films by the Al2O3 buffer layers can be applied to functional thick film in many micro-electromechanical system (MEMS) applications such as micro actuators and sensors.",

author = "Shin, {Tae Hee} and Ha, {Jong Yoon} and Song, {Hyun Cheol} and Yoon, {Seok Jin} and Hwang, {Seong Ju} and Sahn Nahm and Park, {Hyung Ho} and Choi, {Ji Won}",

year = "2013",

month = feb,

doi = "10.1111/jace.12052",

language = "English",

volume = "96",

pages = "491--495",

journal = "Journal of the American Ceramic Society",

issn = "0002-7820",

publisher = "Wiley-Blackwell",

number = "2",

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TY - JOUR

T1 - Role of alumina buffer layer on the dielectric and piezoelectric properties of PZT system thick films

AU - Shin, Tae Hee

AU - Ha, Jong Yoon

AU - Song, Hyun Cheol

AU - Yoon, Seok Jin

AU - Hwang, Seong Ju

AU - Nahm, Sahn

AU - Park, Hyung Ho

AU - Choi, Ji Won

PY - 2013/2

Y1 - 2013/2

N2 - Piezoelectric properties of screen-printed thick films, 0.01Pb(Mg 1/2W1/2)O3-0.41Pb(Ni1/3Nb 2/3)O3-0.35PbTiO3-0.23PbZrO3 + 0.1 wt% Y2O3 + 1.5 wt% ZnO (PMW-PNN-PT-PZ+YZ) on alumina (Al2O3) buffer layers deposited on Si substrates, were studied. To improve piezoelectric properties of and integrate the PMW-PNN-PT-PZ+YZ thick films, the Al2O3 buffer layers on silicon (Si) substrates were used. The Al2O3 buffer layer on the Si substrate suppressed the pyrochlore phases of the piezoelectric thick films and prevented interdiffusion of Si and Pb. The PMW-PNN-PT-PZ+YZ thick films with 900 nm thick Al2O3 buffer layer showed piezoelectric properties such as Pr = 32 μC/cm2, E c = 25 kV/cm, and d33 = 32 pC/N. These significant piezoelectric properties of our screen-printed PMW-PNN-PT-PZ+YZ thick films by the Al2O3 buffer layers can be applied to functional thick film in many micro-electromechanical system (MEMS) applications such as micro actuators and sensors.

AB - Piezoelectric properties of screen-printed thick films, 0.01Pb(Mg 1/2W1/2)O3-0.41Pb(Ni1/3Nb 2/3)O3-0.35PbTiO3-0.23PbZrO3 + 0.1 wt% Y2O3 + 1.5 wt% ZnO (PMW-PNN-PT-PZ+YZ) on alumina (Al2O3) buffer layers deposited on Si substrates, were studied. To improve piezoelectric properties of and integrate the PMW-PNN-PT-PZ+YZ thick films, the Al2O3 buffer layers on silicon (Si) substrates were used. The Al2O3 buffer layer on the Si substrate suppressed the pyrochlore phases of the piezoelectric thick films and prevented interdiffusion of Si and Pb. The PMW-PNN-PT-PZ+YZ thick films with 900 nm thick Al2O3 buffer layer showed piezoelectric properties such as Pr = 32 μC/cm2, E c = 25 kV/cm, and d33 = 32 pC/N. These significant piezoelectric properties of our screen-printed PMW-PNN-PT-PZ+YZ thick films by the Al2O3 buffer layers can be applied to functional thick film in many micro-electromechanical system (MEMS) applications such as micro actuators and sensors.

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ER -

Role of alumina buffer layer on the dielectric and piezoelectric properties of PZT system thick films

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