Role of device area, mesa length and metal overlap distance on breakdown voltage of 4H-SiC p-i-n rectifiers

S. Nigam; Jihyun Kim; B. Luo; F. Ren; G. Y. Chung; K. Shenai; P. G. Neudeck; S. J. Pearton; J. R. Williams

doi:10.1016/S0038-1101(03)00072-8

Role of device area, mesa length and metal overlap distance on breakdown voltage of 4H-SiC p-i-n rectifiers

S. Nigam
, Jihyun Kim
, B. Luo
, F. Ren^*
, G. Y. Chung
, K. Shenai
, P. G. Neudeck
, S. J. Pearton
, J. R. Williams

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The reverse breakdown voltage (V_B) of p-i-n rectifiers fabricated on 4H-SiC was measured as a function of device active area, mesa length and metal overlap distance for diodes with SiO₂ passivated mesa edge termination. V_B was inversely dependent on device area for the range 0.01-0.36 mm², decreasing from ∼-1030 to ∼-730 V. The breakdown voltage was not dependent on mesa length and was maximized at ∼5 μm metal overlap distance. The on/off ratio was ∼10⁴ at 3.5/-1000 V, with the power figure-of-merit V_B²/R_ON reaching values as high as 84.5 MWcm^-2.

Original language	English
Pages (from-to)	1461-1464
Number of pages	4
Journal	Solid-State Electronics
Volume	47
Issue number	9
DOIs	https://doi.org/10.1016/S0038-1101(03)00072-8
Publication status	Published - 2003 Sept
Externally published	Yes

Bibliographical note

Funding Information:
The work at UF is partially supported by NSF CTS 991173, while the work at Sterling Semiconductor is partially supported by Air Force Contract # 33615-01-M-2136 (Dr. James Schofield).

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/S0038-1101(03)00072-8

Cite this

@article{ab562ac4f45d49a9b782c2ac74ea9466,

title = "Role of device area, mesa length and metal overlap distance on breakdown voltage of 4H-SiC p-i-n rectifiers",

abstract = "The reverse breakdown voltage (VB) of p-i-n rectifiers fabricated on 4H-SiC was measured as a function of device active area, mesa length and metal overlap distance for diodes with SiO2 passivated mesa edge termination. VB was inversely dependent on device area for the range 0.01-0.36 mm2, decreasing from ∼-1030 to ∼-730 V. The breakdown voltage was not dependent on mesa length and was maximized at ∼5 μm metal overlap distance. The on/off ratio was ∼104 at 3.5/-1000 V, with the power figure-of-merit VB2/RON reaching values as high as 84.5 MWcm-2.",

author = "S. Nigam and Jihyun Kim and B. Luo and F. Ren and Chung, \{G. Y.\} and K. Shenai and Neudeck, \{P. G.\} and Pearton, \{S. J.\} and Williams, \{J. R.\}",

note = "Funding Information: The work at UF is partially supported by NSF CTS 991173, while the work at Sterling Semiconductor is partially supported by Air Force Contract \# 33615-01-M-2136 (Dr. James Schofield). ",

year = "2003",

month = sep,

doi = "10.1016/S0038-1101(03)00072-8",

language = "English",

volume = "47",

pages = "1461--1464",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

number = "9",

}

TY - JOUR

T1 - Role of device area, mesa length and metal overlap distance on breakdown voltage of 4H-SiC p-i-n rectifiers

AU - Nigam, S.

AU - Kim, Jihyun

AU - Luo, B.

AU - Ren, F.

AU - Chung, G. Y.

AU - Shenai, K.

AU - Neudeck, P. G.

AU - Pearton, S. J.

AU - Williams, J. R.

N1 - Funding Information: The work at UF is partially supported by NSF CTS 991173, while the work at Sterling Semiconductor is partially supported by Air Force Contract # 33615-01-M-2136 (Dr. James Schofield).

PY - 2003/9

Y1 - 2003/9

N2 - The reverse breakdown voltage (VB) of p-i-n rectifiers fabricated on 4H-SiC was measured as a function of device active area, mesa length and metal overlap distance for diodes with SiO2 passivated mesa edge termination. VB was inversely dependent on device area for the range 0.01-0.36 mm2, decreasing from ∼-1030 to ∼-730 V. The breakdown voltage was not dependent on mesa length and was maximized at ∼5 μm metal overlap distance. The on/off ratio was ∼104 at 3.5/-1000 V, with the power figure-of-merit VB2/RON reaching values as high as 84.5 MWcm-2.

AB - The reverse breakdown voltage (VB) of p-i-n rectifiers fabricated on 4H-SiC was measured as a function of device active area, mesa length and metal overlap distance for diodes with SiO2 passivated mesa edge termination. VB was inversely dependent on device area for the range 0.01-0.36 mm2, decreasing from ∼-1030 to ∼-730 V. The breakdown voltage was not dependent on mesa length and was maximized at ∼5 μm metal overlap distance. The on/off ratio was ∼104 at 3.5/-1000 V, with the power figure-of-merit VB2/RON reaching values as high as 84.5 MWcm-2.

UR - https://www.scopus.com/pages/publications/0037702841

UR - https://www.scopus.com/pages/publications/0037702841#tab=citedBy

U2 - 10.1016/S0038-1101(03)00072-8

DO - 10.1016/S0038-1101(03)00072-8

M3 - Article

AN - SCOPUS:0037702841

SN - 0038-1101

VL - 47

SP - 1461

EP - 1464

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 9

ER -

Role of device area, mesa length and metal overlap distance on breakdown voltage of 4H-SiC p-i-n rectifiers

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this