Role of nitrogen and impurity on free carrier concentration in GaAsN grown by chemical beam epitaxy

Takahiro Imai; Hae Seok Lee; Kenichi Nishimura; Hidetoshi Suzuki; Tetsuya Kawahigashi; Takuo Sasaki; Yoshio Ohshita; Masafumi Yamaguchi

doi:10.1109/WCPEC.2006.279588

Role of nitrogen and impurity on free carrier concentration in GaAsN grown by chemical beam epitaxy

Takahiro Imai^*
, Hae Seok Lee
, Kenichi Nishimura
, Hidetoshi Suzuki
, Tetsuya Kawahigashi
, Takuo Sasaki
, Yoshio Ohshita
, Masafumi Yamaguchi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

GaAsN thin films were grown by chemical beam epitaxy using monomethylhydrazine ((CH₃)N₂H₃) as the N sources, and the role of the nitrogen (N) and impurities (hydrogen (H), carbon (C)) on free carrier concentration was investigated. The N, H, and C concentrations increased with decreasing growth temperature. GaAsN thin film grown at 470°C was n-type conduction, and the donor is thought to be the same in GaAs thin film. On the other hand, the films grown at 390-460°C were p-type conduction. In the range of 420-460°C, the hole concentration increased with decreasing growth temperature, and it decreased below 420°C, respectively. In order to clarify the origin of acceptor in p-GaAsN thin films, the dependence of growth temperature on the hole concentration and N, H, and C concentration were investigated, and the relationship between them was discussed.

Original language	English
Title of host publication	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Publisher	IEEE Computer Society
Pages	842-844
Number of pages	3
ISBN (Print)	1424400163, 9781424400164
DOIs	https://doi.org/10.1109/WCPEC.2006.279588
Publication status	Published - 2006
Externally published	Yes
Event	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States Duration: 2006 May 7 → 2006 May 12

Publication series

Name	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume	1

Other

Other	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country/Territory	United States
City	Waikoloa, HI
Period	06/5/7 → 06/5/12

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry

Access to Document

10.1109/WCPEC.2006.279588

Cite this

Imai, T., Lee, H. S., Nishimura, K., Suzuki, H., Kawahigashi, T., Sasaki, T., Ohshita, Y., & Yamaguchi, M. (2006). Role of nitrogen and impurity on free carrier concentration in GaAsN grown by chemical beam epitaxy. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (pp. 842-844). Article 4059761 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1). IEEE Computer Society. https://doi.org/10.1109/WCPEC.2006.279588

Role of nitrogen and impurity on free carrier concentration in GaAsN grown by chemical beam epitaxy. / Imai, Takahiro; Lee, Hae Seok; Nishimura, Kenichi et al.
Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. p. 842-844 4059761 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Imai, T, Lee, HS, Nishimura, K, Suzuki, H, Kawahigashi, T, Sasaki, T, Ohshita, Y & Yamaguchi, M 2006, Role of nitrogen and impurity on free carrier concentration in GaAsN grown by chemical beam epitaxy. in Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4., 4059761, Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, vol. 1, IEEE Computer Society, pp. 842-844, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States, 06/5/7. https://doi.org/10.1109/WCPEC.2006.279588

Imai T, Lee HS, Nishimura K, Suzuki H, Kawahigashi T, Sasaki T et al. Role of nitrogen and impurity on free carrier concentration in GaAsN grown by chemical beam epitaxy. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society. 2006. p. 842-844. 4059761. (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4). doi: 10.1109/WCPEC.2006.279588

Imai, Takahiro ; Lee, Hae Seok ; Nishimura, Kenichi et al. / Role of nitrogen and impurity on free carrier concentration in GaAsN grown by chemical beam epitaxy. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. pp. 842-844 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4).

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title = "Role of nitrogen and impurity on free carrier concentration in GaAsN grown by chemical beam epitaxy",

abstract = "GaAsN thin films were grown by chemical beam epitaxy using monomethylhydrazine ((CH3)N2H3) as the N sources, and the role of the nitrogen (N) and impurities (hydrogen (H), carbon (C)) on free carrier concentration was investigated. The N, H, and C concentrations increased with decreasing growth temperature. GaAsN thin film grown at 470°C was n-type conduction, and the donor is thought to be the same in GaAs thin film. On the other hand, the films grown at 390-460°C were p-type conduction. In the range of 420-460°C, the hole concentration increased with decreasing growth temperature, and it decreased below 420°C, respectively. In order to clarify the origin of acceptor in p-GaAsN thin films, the dependence of growth temperature on the hole concentration and N, H, and C concentration were investigated, and the relationship between them was discussed.",

author = "Takahiro Imai and Lee, \{Hae Seok\} and Kenichi Nishimura and Hidetoshi Suzuki and Tetsuya Kawahigashi and Takuo Sasaki and Yoshio Ohshita and Masafumi Yamaguchi",

year = "2006",

doi = "10.1109/WCPEC.2006.279588",

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series = "Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4",

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booktitle = "Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4",

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AU - Imai, Takahiro

AU - Lee, Hae Seok

AU - Nishimura, Kenichi

AU - Suzuki, Hidetoshi

AU - Kawahigashi, Tetsuya

AU - Sasaki, Takuo

AU - Ohshita, Yoshio

AU - Yamaguchi, Masafumi

PY - 2006

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N2 - GaAsN thin films were grown by chemical beam epitaxy using monomethylhydrazine ((CH3)N2H3) as the N sources, and the role of the nitrogen (N) and impurities (hydrogen (H), carbon (C)) on free carrier concentration was investigated. The N, H, and C concentrations increased with decreasing growth temperature. GaAsN thin film grown at 470°C was n-type conduction, and the donor is thought to be the same in GaAs thin film. On the other hand, the films grown at 390-460°C were p-type conduction. In the range of 420-460°C, the hole concentration increased with decreasing growth temperature, and it decreased below 420°C, respectively. In order to clarify the origin of acceptor in p-GaAsN thin films, the dependence of growth temperature on the hole concentration and N, H, and C concentration were investigated, and the relationship between them was discussed.

AB - GaAsN thin films were grown by chemical beam epitaxy using monomethylhydrazine ((CH3)N2H3) as the N sources, and the role of the nitrogen (N) and impurities (hydrogen (H), carbon (C)) on free carrier concentration was investigated. The N, H, and C concentrations increased with decreasing growth temperature. GaAsN thin film grown at 470°C was n-type conduction, and the donor is thought to be the same in GaAs thin film. On the other hand, the films grown at 390-460°C were p-type conduction. In the range of 420-460°C, the hole concentration increased with decreasing growth temperature, and it decreased below 420°C, respectively. In order to clarify the origin of acceptor in p-GaAsN thin films, the dependence of growth temperature on the hole concentration and N, H, and C concentration were investigated, and the relationship between them was discussed.

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ER -

Role of nitrogen and impurity on free carrier concentration in GaAsN grown by chemical beam epitaxy

Abstract

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