Role of nitrogen and impurity on free carrier concentration in GaAsN grown by chemical beam epitaxy

  • Takahiro Imai*
  • , Hae Seok Lee
  • , Kenichi Nishimura
  • , Hidetoshi Suzuki
  • , Tetsuya Kawahigashi
  • , Takuo Sasaki
  • , Yoshio Ohshita
  • , Masafumi Yamaguchi
    • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Material Science