Role of nitrogen and impurity on free carrier concentration in GaAsN grown by chemical beam epitaxy

Takahiro Imai, Hae Seok Lee, Kenichi Nishimura, Hidetoshi Suzuki, Tetsuya Kawahigashi, Takuo Sasaki, Yoshio Ohshita, Masafumi Yamaguchi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution