Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; H. Amano; S. J. Pearton; I. H. Lee; Q. Sun; J. Han; S. Yu Karpov

doi:10.1063/1.3555470

Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, H. Amano, S. J. Pearton, I. H. Lee, Q. Sun, J. Han, S. Yu Karpov

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

The correlation of integrated microcathodoluminescence efficiency with crystalline quality and deep trap density of nonpolar GaN films grown by metal organic chemical vapor deposition on semi-insulating 6H-m-SiC or r-sapphire is analyzed. The results suggest a strong influence of nonradiative recombination centers whose concentration decreases with decreased density of extended defects. Electron traps with energy levels at E_c -0.6 eV and which pin the Fermi level in films with high defect density are the most likely candidates for the decrease in light emission efficiency in nonpolar GaN.

Original language	English
Article number	072104
Journal	Applied Physics Letters
Volume	98
Issue number	7
DOIs	https://doi.org/10.1063/1.3555470
Publication status	Published - 2011 Feb 14
Externally published	Yes

Bibliographical note

Funding Information:
The work at IRM was supported in part by RFBR Grant No. 08-02-00058 and by ISTC Grant No. 3870. The work at Yale University was partly supported by the United States Department of Energy under Contract No. DE-FC26-07NT43227.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency",

abstract = "The correlation of integrated microcathodoluminescence efficiency with crystalline quality and deep trap density of nonpolar GaN films grown by metal organic chemical vapor deposition on semi-insulating 6H-m-SiC or r-sapphire is analyzed. The results suggest a strong influence of nonradiative recombination centers whose concentration decreases with decreased density of extended defects. Electron traps with energy levels at Ec -0.6 eV and which pin the Fermi level in films with high defect density are the most likely candidates for the decrease in light emission efficiency in nonpolar GaN.",

author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and H. Amano and Pearton, {S. J.} and Lee, {I. H.} and Q. Sun and J. Han and Karpov, {S. Yu}",

note = "Funding Information: The work at IRM was supported in part by RFBR Grant No. 08-02-00058 and by ISTC Grant No. 3870. The work at Yale University was partly supported by the United States Department of Energy under Contract No. DE-FC26-07NT43227.",

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doi = "10.1063/1.3555470",

language = "English",

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T1 - Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Amano, H.

AU - Pearton, S. J.

AU - Lee, I. H.

AU - Sun, Q.

AU - Han, J.

AU - Karpov, S. Yu

N1 - Funding Information: The work at IRM was supported in part by RFBR Grant No. 08-02-00058 and by ISTC Grant No. 3870. The work at Yale University was partly supported by the United States Department of Energy under Contract No. DE-FC26-07NT43227.

PY - 2011/2/14

Y1 - 2011/2/14

N2 - The correlation of integrated microcathodoluminescence efficiency with crystalline quality and deep trap density of nonpolar GaN films grown by metal organic chemical vapor deposition on semi-insulating 6H-m-SiC or r-sapphire is analyzed. The results suggest a strong influence of nonradiative recombination centers whose concentration decreases with decreased density of extended defects. Electron traps with energy levels at Ec -0.6 eV and which pin the Fermi level in films with high defect density are the most likely candidates for the decrease in light emission efficiency in nonpolar GaN.

AB - The correlation of integrated microcathodoluminescence efficiency with crystalline quality and deep trap density of nonpolar GaN films grown by metal organic chemical vapor deposition on semi-insulating 6H-m-SiC or r-sapphire is analyzed. The results suggest a strong influence of nonradiative recombination centers whose concentration decreases with decreased density of extended defects. Electron traps with energy levels at Ec -0.6 eV and which pin the Fermi level in films with high defect density are the most likely candidates for the decrease in light emission efficiency in nonpolar GaN.

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U2 - 10.1063/1.3555470

DO - 10.1063/1.3555470

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency

Abstract

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