Role of Polysilicon in Poly-Si/SiOx Passivating Contact Solar Cells

Hyunjung Park, Se Jin Park, Soohyun Bae, Ji Yeon Hyun, Chang Hyun Lee, Seung Hyun Shin, Yoon Mook Kang, Haeseok Lee, Donghwan Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We investigated the passivation qualities of polySi contacts according to several material and fabrication properties to study their role in improving the efficiency of solar cells. Our observations indicate that P in-diffusion degrades the implied open circuit voltage (iVOC), while gettering increases it. Thick, highly doped poly-Si is needed for high iVOC; however, this increases parasitic absorption. Hence, we suggest a new approach to fabricating highly doped, thin poly-Si contact, with high iVOC, via etch-back. On etching, the iVOC remained at its original value until the poly-Si was fully etched, and we obtained an improved solar cell efficiency of 20.59%.

Original languageEnglish
Title of host publication2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2173-2175
Number of pages3
ISBN (Electronic)9781538685297
DOIs
Publication statusPublished - 2018 Nov 26
Event7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States
Duration: 2018 Jun 102018 Jun 15

Other

Other7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/TerritoryUnited States
CityWaikoloa Village
Period18/6/1018/6/15

Keywords

  • Photovoltaic cells
  • silicon devices

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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