Abstract
We investigated the passivation qualities of polySi contacts according to several material and fabrication properties to study their role in improving the efficiency of solar cells. Our observations indicate that P in-diffusion degrades the implied open circuit voltage (iVOC), while gettering increases it. Thick, highly doped poly-Si is needed for high iVOC; however, this increases parasitic absorption. Hence, we suggest a new approach to fabricating highly doped, thin poly-Si contact, with high iVOC, via etch-back. On etching, the iVOC remained at its original value until the poly-Si was fully etched, and we obtained an improved solar cell efficiency of 20.59%.
Original language | English |
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Title of host publication | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 2173-2175 |
Number of pages | 3 |
ISBN (Electronic) | 9781538685297 |
DOIs | |
Publication status | Published - 2018 Nov 26 |
Event | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: 2018 Jun 10 → 2018 Jun 15 |
Other
Other | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 |
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Country/Territory | United States |
City | Waikoloa Village |
Period | 18/6/10 → 18/6/15 |
Keywords
- Photovoltaic cells
- silicon devices
ASJC Scopus subject areas
- Energy Engineering and Power Technology
- Renewable Energy, Sustainability and the Environment
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials