Role of Ru nano-dots embedded in TiO₂ thin films for improving the resistive switching behavior

Ru nano-dots were embedded in a Pt/ TiO₂ /Pt resistive switching cell to improve the uniformity of the switching parameters. The TiO₂ film grown on the Ru nano-dots had a rutile structure locally whereas other parts of the TiO₂ film had an anatase structure. The rutile-structured TiO₂ formed conducting filaments easily and their rupture was much more uniform than the randomized ones in anatase TiO ₂. This largely improved the resistance uniformity at the reading voltage during the repeated resistance switching events. The improvement was also attributed to the high leakage current of the pristine sample at the reading voltage.