Abstract
A 2D photonic bandgap single defect laser is demonstrated. For an active medium, six strain compensated InGaAsP quantum wells are employed because of the relatively small surface recombination velocity. To realize a mechanically robust structure with good thermal properties, the InGaAsP layer was fused with the AlAs layer on top of a GaAs wafer. The top AlAs is wet-oxidized for optical confinement in vertical direction. The finished photonic bandgap cavity is optically pumped with a 980-nm diode laser beam focused to approximately 4 mm in diameter.
Original language | English |
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Pages (from-to) | 415-416 |
Number of pages | 2 |
Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
Volume | 2 |
Publication status | Published - 1999 |
Externally published | Yes |
Event | Proceedings of the 1999 12th Annual Meeting IEEE Lasers and Electro-Optics Society (LEOS'99) - San Francisco, CA, USA Duration: 1999 Nov 8 → 1999 Nov 11 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering