Room-temperature 2-D photonic bandgap single defect laser

Jeong Ki Hwang; Han Youl Ryu; Dae Sung Song; Il Young Han; Hyun Woo Song; Hong Kyu Park; Yong Hee Lee; Dong Hoon Jang

Room-temperature 2-D photonic bandgap single defect laser

Jeong Ki Hwang, Han Youl Ryu, Dae Sung Song, Il Young Han, Hyun Woo Song, Hong Kyu Park, Yong Hee Lee, Dong Hoon Jang

Research output: Contribution to journal › Conference article › peer-review

Abstract

A 2D photonic bandgap single defect laser is demonstrated. For an active medium, six strain compensated InGaAsP quantum wells are employed because of the relatively small surface recombination velocity. To realize a mechanically robust structure with good thermal properties, the InGaAsP layer was fused with the AlAs layer on top of a GaAs wafer. The top AlAs is wet-oxidized for optical confinement in vertical direction. The finished photonic bandgap cavity is optically pumped with a 980-nm diode laser beam focused to approximately 4 mm in diameter.

Original language	English
Pages (from-to)	415-416
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2
Publication status	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 12th Annual Meeting IEEE Lasers and Electro-Optics Society (LEOS'99) - San Francisco, CA, USA Duration: 1999 Nov 8 → 1999 Nov 11

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@article{349ce8b32ea44cdbb0113cf851d6ff69,

title = "Room-temperature 2-D photonic bandgap single defect laser",

abstract = "A 2D photonic bandgap single defect laser is demonstrated. For an active medium, six strain compensated InGaAsP quantum wells are employed because of the relatively small surface recombination velocity. To realize a mechanically robust structure with good thermal properties, the InGaAsP layer was fused with the AlAs layer on top of a GaAs wafer. The top AlAs is wet-oxidized for optical confinement in vertical direction. The finished photonic bandgap cavity is optically pumped with a 980-nm diode laser beam focused to approximately 4 mm in diameter.",

author = "Hwang, {Jeong Ki} and Ryu, {Han Youl} and Song, {Dae Sung} and Han, {Il Young} and Song, {Hyun Woo} and Park, {Hong Kyu} and Lee, {Yong Hee} and Jang, {Dong Hoon}",

year = "1999",

language = "English",

volume = "2",

pages = "415--416",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1999 12th Annual Meeting IEEE Lasers and Electro-Optics Society (LEOS'99) ; Conference date: 08-11-1999 Through 11-11-1999",

}

TY - JOUR

T1 - Room-temperature 2-D photonic bandgap single defect laser

AU - Hwang, Jeong Ki

AU - Ryu, Han Youl

AU - Song, Dae Sung

AU - Han, Il Young

AU - Song, Hyun Woo

AU - Park, Hong Kyu

AU - Lee, Yong Hee

AU - Jang, Dong Hoon

PY - 1999

Y1 - 1999

N2 - A 2D photonic bandgap single defect laser is demonstrated. For an active medium, six strain compensated InGaAsP quantum wells are employed because of the relatively small surface recombination velocity. To realize a mechanically robust structure with good thermal properties, the InGaAsP layer was fused with the AlAs layer on top of a GaAs wafer. The top AlAs is wet-oxidized for optical confinement in vertical direction. The finished photonic bandgap cavity is optically pumped with a 980-nm diode laser beam focused to approximately 4 mm in diameter.

AB - A 2D photonic bandgap single defect laser is demonstrated. For an active medium, six strain compensated InGaAsP quantum wells are employed because of the relatively small surface recombination velocity. To realize a mechanically robust structure with good thermal properties, the InGaAsP layer was fused with the AlAs layer on top of a GaAs wafer. The top AlAs is wet-oxidized for optical confinement in vertical direction. The finished photonic bandgap cavity is optically pumped with a 980-nm diode laser beam focused to approximately 4 mm in diameter.

UR - http://www.scopus.com/inward/record.url?scp=0033341393&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033341393

SN - 1092-8081

VL - 2

SP - 415

EP - 416

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - Proceedings of the 1999 12th Annual Meeting IEEE Lasers and Electro-Optics Society (LEOS'99)

Y2 - 8 November 1999 through 11 November 1999

ER -

Room-temperature 2-D photonic bandgap single defect laser

Abstract

ASJC Scopus subject areas

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