Room-temperature charge stability modulated by quantum effects in a nanoscale silicon island

S. J. Shin; J. J. Lee; H. J. Kang; J. B. Choi; S. R.Eric Yang; Y. Takahashi; D. G. Hasko

doi:10.1021/nl1044692

Room-temperature charge stability modulated by quantum effects in a nanoscale silicon island

S. J. Shin, J. J. Lee, H. J. Kang, J. B. Choi, S. R.Eric Yang, Y. Takahashi, D. G. Hasko

Research output: Contribution to journal › Article › peer-review

72 Citations (Scopus)

Abstract

We report on transport measurement performed on a room-temperature- operating ultrasmall Coulomb blockade devices with a silicon island of sub5 nm. The charge stability at 300K exhibits a substantial change in slopes and diagonal size of each successive Coulomb diamond, but remarkably its main feature persists even at low temperature down to 5.3K except for additional Coulomb peak splitting. This key feature of charge stability with additional fine structures of Coulomb peaks are successfully modeled by including the interplay between Coulomb interaction, valley splitting, and strong quantum confinement, which leads to several low-energy many-body excited states for each dot occupancy. These excited states become enhanced in the sub5 nm ultrasmall scale and persist even at 300K in the form of cluster, leading to the substantial modulation of charge stability.

Original language	English
Pages (from-to)	1591-1597
Number of pages	7
Journal	Nano Letters
Volume	11
Issue number	4
DOIs	https://doi.org/10.1021/nl1044692
Publication status	Published - 2011 Apr 13

Keywords

Coulomb blockade
Single-electron transport
nanoscale silicon dot
quantum effects
room-temperature charge stability

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

Access to Document

10.1021/nl1044692

Cite this

@article{784b03eca0b544b8ac601548743f7a9f,

title = "Room-temperature charge stability modulated by quantum effects in a nanoscale silicon island",

abstract = "We report on transport measurement performed on a room-temperature- operating ultrasmall Coulomb blockade devices with a silicon island of sub5 nm. The charge stability at 300K exhibits a substantial change in slopes and diagonal size of each successive Coulomb diamond, but remarkably its main feature persists even at low temperature down to 5.3K except for additional Coulomb peak splitting. This key feature of charge stability with additional fine structures of Coulomb peaks are successfully modeled by including the interplay between Coulomb interaction, valley splitting, and strong quantum confinement, which leads to several low-energy many-body excited states for each dot occupancy. These excited states become enhanced in the sub5 nm ultrasmall scale and persist even at 300K in the form of cluster, leading to the substantial modulation of charge stability.",

keywords = "Coulomb blockade, Single-electron transport, nanoscale silicon dot, quantum effects, room-temperature charge stability",

author = "Shin, {S. J.} and Lee, {J. J.} and Kang, {H. J.} and Choi, {J. B.} and Yang, {S. R.Eric} and Y. Takahashi and Hasko, {D. G.}",

year = "2011",

month = apr,

day = "13",

doi = "10.1021/nl1044692",

language = "English",

volume = "11",

pages = "1591--1597",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "4",

}

TY - JOUR

T1 - Room-temperature charge stability modulated by quantum effects in a nanoscale silicon island

AU - Shin, S. J.

AU - Lee, J. J.

AU - Kang, H. J.

AU - Choi, J. B.

AU - Yang, S. R.Eric

AU - Takahashi, Y.

AU - Hasko, D. G.

PY - 2011/4/13

Y1 - 2011/4/13

N2 - We report on transport measurement performed on a room-temperature- operating ultrasmall Coulomb blockade devices with a silicon island of sub5 nm. The charge stability at 300K exhibits a substantial change in slopes and diagonal size of each successive Coulomb diamond, but remarkably its main feature persists even at low temperature down to 5.3K except for additional Coulomb peak splitting. This key feature of charge stability with additional fine structures of Coulomb peaks are successfully modeled by including the interplay between Coulomb interaction, valley splitting, and strong quantum confinement, which leads to several low-energy many-body excited states for each dot occupancy. These excited states become enhanced in the sub5 nm ultrasmall scale and persist even at 300K in the form of cluster, leading to the substantial modulation of charge stability.

AB - We report on transport measurement performed on a room-temperature- operating ultrasmall Coulomb blockade devices with a silicon island of sub5 nm. The charge stability at 300K exhibits a substantial change in slopes and diagonal size of each successive Coulomb diamond, but remarkably its main feature persists even at low temperature down to 5.3K except for additional Coulomb peak splitting. This key feature of charge stability with additional fine structures of Coulomb peaks are successfully modeled by including the interplay between Coulomb interaction, valley splitting, and strong quantum confinement, which leads to several low-energy many-body excited states for each dot occupancy. These excited states become enhanced in the sub5 nm ultrasmall scale and persist even at 300K in the form of cluster, leading to the substantial modulation of charge stability.

KW - Coulomb blockade

KW - Single-electron transport

KW - nanoscale silicon dot

KW - quantum effects

KW - room-temperature charge stability

UR - http://www.scopus.com/inward/record.url?scp=79954543984&partnerID=8YFLogxK

U2 - 10.1021/nl1044692

DO - 10.1021/nl1044692

M3 - Article

C2 - 21446734

AN - SCOPUS:79954543984

SN - 1530-6984

VL - 11

SP - 1591

EP - 1597

JO - Nano Letters

JF - Nano Letters

IS - 4

ER -

Room-temperature charge stability modulated by quantum effects in a nanoscale silicon island

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this