Room-temperature continuous-wave indirect-bandgap transition lasing in an ultra-thin WS2 disk

Junghyun Sung, Dongjin Shin, Hyun Hee Cho, Seong Won Lee, Seungmin Park, Young Duck Kim, Jong Sung Moon, Je Hyung Kim, Su Hyun Gong

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

Small semiconductor lasers that can be integrated on a chip are essential for a wide range of optical applications, including optical computing, communication and sensing. Practical laser applications have only been developed with direct-bandgap materials because of a general belief that lasing action from indirect-bandgap materials is almost impossible. Here we report unexpected indirect-bandgap transition lasing in an ultra-thin WS2 disk. We demonstrate that a 50-nm-thick WS2 disk offers efficient optical gain and whispering gallery modes that are sufficient for lasing action. As a result, the WS2 disk exhibits indirect transition lasing, even under continuous-wave excitation at room temperature. Our experimental results are in close agreement with theoretical modelling for phonon-assisted photon lasing. The results derived from external cavity-free ultra-thin WS2 layers offer a new direction for van-der-Waals-material-based nanophotonics and introduce the possibility for optical devices based on indirect-bandgap materials.

Original languageEnglish
Pages (from-to)792-797
Number of pages6
JournalNature Photonics
Volume16
Issue number11
DOIs
Publication statusPublished - 2022 Nov

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF-2019R1A2C2003313) and the National R&D Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (2020M3H3A1105796, 2021M3F3A2A03017083). We acknowledge support provided by the Samsung Science and Technology Foundation (SSTF-BA1902-03) and a Korea University Grant. Y.D.K. acknowledges support from the NRF of Korea (2021K1A3A1A32084700, 2021R1A2C2093155). Electron-beam lithography systems were investigated in the Multidimensional Materials Research Center at Kyung Hee University (2021R1A6C101A437).

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF-2019R1A2C2003313) and the National R&D Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (2020M3H3A1105796, 2021M3F3A2A03017083). We acknowledge support provided by the Samsung Science and Technology Foundation (SSTF-BA1902-03) and a Korea University Grant. Y.D.K. acknowledges support from the NRF of Korea (2021K1A3A1A32084700, 2021R1A2C2093155). Electron-beam lithography systems were investigated in the Multidimensional Materials Research Center at Kyung Hee University (2021R1A6C101A437).

Publisher Copyright:
© 2022, The Author(s), under exclusive licence to Springer Nature Limited.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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