Room-temperature ferromagnetism of Cu ion-implanted Ga-doped ZnO

Jong Han Lee, Sangwon Shin, Keun Hwa Chae, Donghwan Kim, Jonghan Song

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


1 MeV Cu 2 ions have been implanted into un-doped ZnO and Ga-doped ZnO films with a dose of 1 × 10 17 ions/cm 2 at room-temperature. Cu ion-implanted Ga-doped ZnO had ferromagnetism at room-temperature and the saturation magnetization of this sample was estimated to be 0.12 μ B per Cu, while the Cu ion-implanted un-doped ZnO did not show ferromagnetic behavior. Near-edge X-ray fine structure (NEXAFS) spectroscopy revealed that a partial amount of implanted Cu ions existed as Cu 2 (d 9) state in Ga-doped ZnO film. On the other hand, almost Cu atoms existed as Cu 1 (d 10) state in un-doped ZnO film. However, the subsequent annealing at temperature above 800°C on this ferromagnetic sample induced the annihilation of ferromagnetism due to the formation of non-ferromagnetic Cu 2O phase.

Original languageEnglish
Pages (from-to)924-927
Number of pages4
JournalCurrent Applied Physics
Issue number3
Publication statusPublished - 2012 May

Bibliographical note

Funding Information:
T his work was supported by Korea Institute of Science and Technology (KIST), Seoul, Grant no. 2V02081 , a Human Resources Development grant from the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy, Republic of Korea (No. 20104010100640 ), and the New & Renewable Energy of KETEP grant funded by the  Korea government Ministry of Knowledge Economy (No.  20093021010010 ).


  • Copper implantation
  • Dilute magnetic semiconductor
  • Ferromagnetic
  • ZnO

ASJC Scopus subject areas

  • General Materials Science
  • General Physics and Astronomy


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