TY - JOUR
T1 - Room-temperature-processed amorphous Sn-In-O electron transport layer for perovskite solar cells
AU - Baek, Seungtae
AU - Han, Jeong Woo
AU - Vidyasagar, Devthade
AU - Cho, Hanbyeol
AU - Ha, Hwi Heon
AU - Kim, Dong Hoe
AU - Heo, Young Woo
AU - Lee, Sangwook
N1 - Funding Information:
Funding: This work was supported by the Dongil Culture and Scholarship Foundation. Financial support from the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT (NRF-2017R1A4A1015022 and NRF-2019R1A2C1084010) is also gratefully acknowledged.
Publisher Copyright:
© 2019 by the authors.
PY - 2020/1/1
Y1 - 2020/1/1
N2 - We report amorphous tin-indium-oxide (TIO, Sn fraction: >50 atomic percentage (at%)) thin films as a new electron transport layer (ETL) of perovskite solar cells (PSCs). TIO thin films with Sn fraction of 52, 77, 83, 92, and 100 at% were grown on crystalline indium-tin-oxide (ITO, Sn fraction: ∼10 at%) thin films, a common transparent conducting oxide, by co-sputtering In2O3 and SnO2 at room temperature. The energy band structures of the amorphous TIO thin films were determined from the optical absorbance and the ultraviolet photoelectron spectra. All the examined compositions are characterized by a conduction band edge lying between that of ITO and that of perovskite (here, methylammonium lead triiodide), indicating that TIO is a potentially viable ETL of PSCs. The photovoltaic characteristics of the TIO-based PSCs were evaluated. Owing mainly to the highest fill factor and open circuit voltage, the optimal power conversion effciency was obtained for the 77 at%-Sn TIO ETL with TiCl4 treatment. The fill factor and the open circuit voltage changes with varying the Sn fraction, despite similar conduction band edges. We attribute these differences to the considerable changes in the electrical resistivity of the TIO ETL. This would have a significant effect on the shunt and/or the series resistances. The TIO ETL can be continuously grown on an ITO TCO in a chamber, as ITO and TIO are composed of identical elements, which would help to reduce production time and costs.
AB - We report amorphous tin-indium-oxide (TIO, Sn fraction: >50 atomic percentage (at%)) thin films as a new electron transport layer (ETL) of perovskite solar cells (PSCs). TIO thin films with Sn fraction of 52, 77, 83, 92, and 100 at% were grown on crystalline indium-tin-oxide (ITO, Sn fraction: ∼10 at%) thin films, a common transparent conducting oxide, by co-sputtering In2O3 and SnO2 at room temperature. The energy band structures of the amorphous TIO thin films were determined from the optical absorbance and the ultraviolet photoelectron spectra. All the examined compositions are characterized by a conduction band edge lying between that of ITO and that of perovskite (here, methylammonium lead triiodide), indicating that TIO is a potentially viable ETL of PSCs. The photovoltaic characteristics of the TIO-based PSCs were evaluated. Owing mainly to the highest fill factor and open circuit voltage, the optimal power conversion effciency was obtained for the 77 at%-Sn TIO ETL with TiCl4 treatment. The fill factor and the open circuit voltage changes with varying the Sn fraction, despite similar conduction band edges. We attribute these differences to the considerable changes in the electrical resistivity of the TIO ETL. This would have a significant effect on the shunt and/or the series resistances. The TIO ETL can be continuously grown on an ITO TCO in a chamber, as ITO and TIO are composed of identical elements, which would help to reduce production time and costs.
KW - Band structure
KW - Electrical property
KW - Electron transport layer
KW - Perovskite solar cell
KW - Room temperature
KW - Tin-indium-oxide
UR - http://www.scopus.com/inward/record.url?scp=85079760274&partnerID=8YFLogxK
U2 - 10.3390/ma13010032
DO - 10.3390/ma13010032
M3 - Article
AN - SCOPUS:85079760274
SN - 1996-1944
VL - 13
SP - 32
JO - Materials
JF - Materials
IS - 1
ER -
