Room-temperature semiconductor gas sensor based on nonstoichiometric tungsten oxide nanorod film

Yong Shin Kim; Seung Chul Ha; Kyuwon Kim; Haesik Yang; Sung Yool Choi; Youn Tae Kim; Joon T. Park; Chang Hoon Lee; Jiyoung Choi; Jungsun Paek; Kwangyeol Lee

doi:10.1063/1.1929872

Room-temperature semiconductor gas sensor based on nonstoichiometric tungsten oxide nanorod film

Yong Shin Kim, Seung Chul Ha, Kyuwon Kim, Haesik Yang, Sung Yool Choi, Youn Tae Kim, Joon T. Park, Chang Hoon Lee, Jiyoung Choi, Jungsun Paek, Kwangyeol Lee

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

249 Citations (Scopus)

Abstract

Porous tungsten oxide films were deposited onto a sensor substrate with a Si bulk-micromachined hotplate, by drop-coating isopropyl alcohol solution of highly crystalline tungsten oxide (W O2.72) nanorods with average 75 nm length and 4 nm diameter. The temperature-dependent gas sensing characteristics of the films have been investigated over the mild temperature range from 20 to 250 °C. While the sensing responses for ammonia vapor showed increase in electrical conductivity at temperatures above 150 °C as expected for n -type metal oxide sensors, they exhibited the opposite behavior of unusual conductivity decrease below 100 °C. Superb sensing ability of the sensors at room temperature in conjunction with their anomalous conductivity behavior might be attributed to unique nanostructural features of very thin, nonstoichiometric W O2.72.

Original language	English
Article number	213105
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	21
DOIs	https://doi.org/10.1063/1.1929872
Publication status	Published - 2005 May 23

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1929872

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@article{6d2225b918bb48ce9a9a3a873528acea,

title = "Room-temperature semiconductor gas sensor based on nonstoichiometric tungsten oxide nanorod film",

abstract = "Porous tungsten oxide films were deposited onto a sensor substrate with a Si bulk-micromachined hotplate, by drop-coating isopropyl alcohol solution of highly crystalline tungsten oxide (W O2.72) nanorods with average 75 nm length and 4 nm diameter. The temperature-dependent gas sensing characteristics of the films have been investigated over the mild temperature range from 20 to 250 °C. While the sensing responses for ammonia vapor showed increase in electrical conductivity at temperatures above 150 °C as expected for n -type metal oxide sensors, they exhibited the opposite behavior of unusual conductivity decrease below 100 °C. Superb sensing ability of the sensors at room temperature in conjunction with their anomalous conductivity behavior might be attributed to unique nanostructural features of very thin, nonstoichiometric W O2.72.",

author = "Kim, {Yong Shin} and Ha, {Seung Chul} and Kyuwon Kim and Haesik Yang and Choi, {Sung Yool} and Kim, {Youn Tae} and Park, {Joon T.} and Lee, {Chang Hoon} and Jiyoung Choi and Jungsun Paek and Kwangyeol Lee",

note = "Funding Information: This work was supported in part by the NFL and basic research programs of the ETRI and in part by the national research program for the 0.1 Terabit Non-volatile Memory Development sponso-7ed by Korea Ministry of Commerce, Industry and Energy. KL thanks the Korea Research Foundation Grant (KRF-2004–003–C00116).",

year = "2005",

month = may,

day = "23",

doi = "10.1063/1.1929872",

language = "English",

volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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T1 - Room-temperature semiconductor gas sensor based on nonstoichiometric tungsten oxide nanorod film

AU - Kim, Yong Shin

AU - Ha, Seung Chul

AU - Kim, Kyuwon

AU - Yang, Haesik

AU - Choi, Sung Yool

AU - Kim, Youn Tae

AU - Park, Joon T.

AU - Lee, Chang Hoon

AU - Choi, Jiyoung

AU - Paek, Jungsun

AU - Lee, Kwangyeol

N1 - Funding Information: This work was supported in part by the NFL and basic research programs of the ETRI and in part by the national research program for the 0.1 Terabit Non-volatile Memory Development sponso-7ed by Korea Ministry of Commerce, Industry and Energy. KL thanks the Korea Research Foundation Grant (KRF-2004–003–C00116).

PY - 2005/5/23

Y1 - 2005/5/23

N2 - Porous tungsten oxide films were deposited onto a sensor substrate with a Si bulk-micromachined hotplate, by drop-coating isopropyl alcohol solution of highly crystalline tungsten oxide (W O2.72) nanorods with average 75 nm length and 4 nm diameter. The temperature-dependent gas sensing characteristics of the films have been investigated over the mild temperature range from 20 to 250 °C. While the sensing responses for ammonia vapor showed increase in electrical conductivity at temperatures above 150 °C as expected for n -type metal oxide sensors, they exhibited the opposite behavior of unusual conductivity decrease below 100 °C. Superb sensing ability of the sensors at room temperature in conjunction with their anomalous conductivity behavior might be attributed to unique nanostructural features of very thin, nonstoichiometric W O2.72.

AB - Porous tungsten oxide films were deposited onto a sensor substrate with a Si bulk-micromachined hotplate, by drop-coating isopropyl alcohol solution of highly crystalline tungsten oxide (W O2.72) nanorods with average 75 nm length and 4 nm diameter. The temperature-dependent gas sensing characteristics of the films have been investigated over the mild temperature range from 20 to 250 °C. While the sensing responses for ammonia vapor showed increase in electrical conductivity at temperatures above 150 °C as expected for n -type metal oxide sensors, they exhibited the opposite behavior of unusual conductivity decrease below 100 °C. Superb sensing ability of the sensors at room temperature in conjunction with their anomalous conductivity behavior might be attributed to unique nanostructural features of very thin, nonstoichiometric W O2.72.

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DO - 10.1063/1.1929872

M3 - Article

AN - SCOPUS:20844438815

SN - 0003-6951

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 213105

ER -

Room-temperature semiconductor gas sensor based on nonstoichiometric tungsten oxide nanorod film

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