Roughness of zns: prce/ta2o5 interface and its effects on electrical performance of alternating current thin-film electroluminescent devices

Yun Hi Lee

    Research output: Contribution to journalArticlepeer-review

    13 Citations (Scopus)

    Abstract

    Roughness effects of neighboring dielectrics on electrical characteristics of thin-film electroluminescent devices were investigated in order to improve the understanding of physics for the devices. Atomic force microscopy analysis reveal that thicker bottom layer of Ta2O5 shows rougher surface resulting in the rougher surface of ZnS: PrCe layer. It can be easily seen that the dc leakage current increases rapidly with increase of surface roughness Furthermore it is notable that the initiation field of Poole-Frenkel current conduction is lowered by increasing surface roughness of Ta2O5 thin film. Internal charge-phosphor field (Qint - Fp) analysis and capacitance-ac voltage (C-V) analysis for ITO-Ta2O5-ZnS: PrCe-Al and ITO-Ta2O5-ZnS: PrCe-Ta2O5-Al show that the steady state phosphor field is smaller and C-V curve in transition region is less steep with increase of root-mean-square roughness between lower dielectric and phosphor layer in the alternating current thin-film electroluminescent (ACTFEL) devices. Therefore we conclude that interface roughness is one of the physical factors to change the electrical performance of ACTFEL device.

    Original languageEnglish
    Pages (from-to)892-896
    Number of pages5
    JournalIEEE Transactions on Electron Devices
    Volume46
    Issue number5
    DOIs
    Publication statusPublished - 1999

    Bibliographical note

    Funding Information:
    Manuscript received January 2, 1998; revised October 14, 1998. The review of this paper was arranged by Editor P. K. Bhattacharya. This work was supported by the Ministry of Science and Technology in Korea. The authors are with the Korea Institute of Science and Technology, Seoul, Korea. Publisher Item Identifier S 0018-9383(99)03506-6.

    Keywords

    • Electroluminescence
    • Insulator
    • Interface ta
    • Zns
    • o tfel

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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