Roughness of zns: prce/ta2o5 interface and its effects on electrical performance of alternating current thin-film electroluminescent devices

Yun Hi Lee

doi:10.1109/16.760394

Roughness of zns: prce/ta₂o₅ interface and its effects on electrical performance of alternating current thin-film electroluminescent devices

Yun Hi Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Roughness effects of neighboring dielectrics on electrical characteristics of thin-film electroluminescent devices were investigated in order to improve the understanding of physics for the devices. Atomic force microscopy analysis reveal that thicker bottom layer of Ta₂O₅ shows rougher surface resulting in the rougher surface of ZnS: PrCe layer. It can be easily seen that the dc leakage current increases rapidly with increase of surface roughness Furthermore it is notable that the initiation field of Poole-Frenkel current conduction is lowered by increasing surface roughness of Ta₂O₅ thin film. Internal charge-phosphor field (Q_int - F_p) analysis and capacitance-ac voltage (C-V) analysis for ITO-Ta₂O₅-ZnS: PrCe-Al and ITO-Ta₂O₅-ZnS: PrCe-Ta₂O₅-Al show that the steady state phosphor field is smaller and C-V curve in transition region is less steep with increase of root-mean-square roughness between lower dielectric and phosphor layer in the alternating current thin-film electroluminescent (ACTFEL) devices. Therefore we conclude that interface roughness is one of the physical factors to change the electrical performance of ACTFEL device.

Original language	English
Pages (from-to)	892-896
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	46
Issue number	5
DOIs	https://doi.org/10.1109/16.760394
Publication status	Published - 1999

Keywords

Electroluminescence
Insulator
Interface ta
Zns
o tfel

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/16.760394

Cite this

@article{063c1abce6f948ccbda56e989bec7751,

title = "Roughness of zns: prce/ta2o5 interface and its effects on electrical performance of alternating current thin-film electroluminescent devices",

abstract = "Roughness effects of neighboring dielectrics on electrical characteristics of thin-film electroluminescent devices were investigated in order to improve the understanding of physics for the devices. Atomic force microscopy analysis reveal that thicker bottom layer of Ta2O5 shows rougher surface resulting in the rougher surface of ZnS: PrCe layer. It can be easily seen that the dc leakage current increases rapidly with increase of surface roughness Furthermore it is notable that the initiation field of Poole-Frenkel current conduction is lowered by increasing surface roughness of Ta2O5 thin film. Internal charge-phosphor field (Qint - Fp) analysis and capacitance-ac voltage (C-V) analysis for ITO-Ta2O5-ZnS: PrCe-Al and ITO-Ta2O5-ZnS: PrCe-Ta2O5-Al show that the steady state phosphor field is smaller and C-V curve in transition region is less steep with increase of root-mean-square roughness between lower dielectric and phosphor layer in the alternating current thin-film electroluminescent (ACTFEL) devices. Therefore we conclude that interface roughness is one of the physical factors to change the electrical performance of ACTFEL device.",

keywords = "Electroluminescence, Insulator, Interface ta, Zns, o tfel",

author = "Lee, {Yun Hi}",

note = "Funding Information: Manuscript received January 2, 1998; revised October 14, 1998. The review of this paper was arranged by Editor P. K. Bhattacharya. This work was supported by the Ministry of Science and Technology in Korea. The authors are with the Korea Institute of Science and Technology, Seoul, Korea. Publisher Item Identifier S 0018-9383(99)03506-6.",

year = "1999",

doi = "10.1109/16.760394",

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journal = "IEEE Transactions on Electron Devices",

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T2 - prce/ta2o5 interface and its effects on electrical performance of alternating current thin-film electroluminescent devices

AU - Lee, Yun Hi

N1 - Funding Information: Manuscript received January 2, 1998; revised October 14, 1998. The review of this paper was arranged by Editor P. K. Bhattacharya. This work was supported by the Ministry of Science and Technology in Korea. The authors are with the Korea Institute of Science and Technology, Seoul, Korea. Publisher Item Identifier S 0018-9383(99)03506-6.

PY - 1999

Y1 - 1999

N2 - Roughness effects of neighboring dielectrics on electrical characteristics of thin-film electroluminescent devices were investigated in order to improve the understanding of physics for the devices. Atomic force microscopy analysis reveal that thicker bottom layer of Ta2O5 shows rougher surface resulting in the rougher surface of ZnS: PrCe layer. It can be easily seen that the dc leakage current increases rapidly with increase of surface roughness Furthermore it is notable that the initiation field of Poole-Frenkel current conduction is lowered by increasing surface roughness of Ta2O5 thin film. Internal charge-phosphor field (Qint - Fp) analysis and capacitance-ac voltage (C-V) analysis for ITO-Ta2O5-ZnS: PrCe-Al and ITO-Ta2O5-ZnS: PrCe-Ta2O5-Al show that the steady state phosphor field is smaller and C-V curve in transition region is less steep with increase of root-mean-square roughness between lower dielectric and phosphor layer in the alternating current thin-film electroluminescent (ACTFEL) devices. Therefore we conclude that interface roughness is one of the physical factors to change the electrical performance of ACTFEL device.

AB - Roughness effects of neighboring dielectrics on electrical characteristics of thin-film electroluminescent devices were investigated in order to improve the understanding of physics for the devices. Atomic force microscopy analysis reveal that thicker bottom layer of Ta2O5 shows rougher surface resulting in the rougher surface of ZnS: PrCe layer. It can be easily seen that the dc leakage current increases rapidly with increase of surface roughness Furthermore it is notable that the initiation field of Poole-Frenkel current conduction is lowered by increasing surface roughness of Ta2O5 thin film. Internal charge-phosphor field (Qint - Fp) analysis and capacitance-ac voltage (C-V) analysis for ITO-Ta2O5-ZnS: PrCe-Al and ITO-Ta2O5-ZnS: PrCe-Ta2O5-Al show that the steady state phosphor field is smaller and C-V curve in transition region is less steep with increase of root-mean-square roughness between lower dielectric and phosphor layer in the alternating current thin-film electroluminescent (ACTFEL) devices. Therefore we conclude that interface roughness is one of the physical factors to change the electrical performance of ACTFEL device.

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